Flexible Semiconductor Device High-Temperature Processing
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Solution Overview
Problem
Current methods for fabricating semiconductor devices on flexible substrates face challenges in achieving improved electrical characteristics, such as parametric improvements and reduced bowing, warping, and distortion, which are essential for reliable electronic components.
Innovation Solution
A method involving the use of flexible substrates with high-temperature processing, including deposition of materials like amorphous silicon and silicon nitride layers, along with a diffusion barrier, and the application of organic siloxane-based dielectric materials, to enhance semiconductor device performance while minimizing substrate distortion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-temperature processing is used to improve electrical characteristics, then parametric improvements are achieved, but substrate distortion and warping increase
Solution Approach 1:
The patent changes the temperature parameter by implementing a two-stage processing approach: initial formation at low temperature (room temperature to 150°C) followed by a second formation at high temperature (200°C to 400°C). This parameter change allows achieving improved electrical characteristics while controlling substrate distortion through staged temperature management.
Solution Approach 2:
The patent segments the semiconductor formation process into multiple discrete steps with different temperature conditions. The first semiconductor layer is formed at low temperature, then subsequent layers are formed at progressively higher temperatures. This segmentation allows each layer to be optimized independently, achieving good electrical characteristics while managing overall substrate distortion.
2Reliability
If multiple semiconductor layers are deposited to improve electrical characteristics, then device performance improves, but processing complexity increases
Solution Approach 1:
The patent merges multiple semiconductor layers into a integrated structure where each layer serves multiple functions. The first semiconductor layer acts as both an active device layer and a diffusion barrier for subsequent layers. This merging reduces the total number of separate processing steps and materials needed, simplifying the overall process while maintaining improved electrical characteristics.
Solution Approach 2:
The patent uses parameter changes in the form of progressive temperature increases for each subsequent semiconductor layer deposition. This systematic parameter change provides a simple control mechanism for managing the complex multi-layer formation process, making it easier to reproduce and control despite the increased number of layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in semiconductor devices with improved electrical characteristics and reduced distortion, bowing, and warping, enabling more reliable and efficient electronic components on flexible substrates.
Implementation Method 1
depositing at least one layer of material over the flexible substrate, wherein the deposition of the at least one layer of material over the flexible substrate occurs at a temperature of at least 180 degrees Celsius (°C.)
Data Source
AI summary
Some embodiments include a method of providing a semiconductor device. The method can include: (a) providing a flexible substrate; (b) depositing at least one layer of material over the flexible substrate, wherein the deposition of the at least one layer of material over the flexible substrate occurs at a temperature of at least 180° C.; and (c) providing a diffusion barrier between a metal layer and an a-Si layer. Other embodiments are disclosed in this application.