Flexible Semiconductor Device Manufacturing via Metal Foil Substrate
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Solution Overview
Problem
Conventional methods for manufacturing flexible semiconductor devices on resin substrates face challenges such as complex peeling processes and inferior heat resistance, leading to reduced productivity and TFT element properties.
Innovation Solution
A method involving the formation of insulating films, semiconductor layers, and electrodes on a metal foil, which serves as both a substrate and electrode material, allowing for high-temperature processing and improved TFT properties through thermal or laser annealing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a glass substrate is used for forming TFT elements, then the manufacturing process can be simplified, but the display panel becomes heavy and lacks flexibility
Solution Approach 1:
The patent replaces the rigid glass substrate with a flexible resin substrate, enabling the display panel to achieve light weight and flexibility while maintaining the TFT manufacturing process. The resin substrate serves as the base layer upon which the TFT structure is formed, eliminating the need for substrate peeling and transfer processes.
2Weight of moving object
If a resin substrate is used directly for forming TFT elements, then the display panel achieves flexibility and light weight, but the heat resistance becomes insufficient
Solution Approach 1:
The patent introduces a low-melting-point metal layer between the resin substrate and the TFT structure. This metal layer serves as a sacrificial layer that can be selectively removed later, allowing the TFT to be formed at temperatures suitable for resin substrates while maintaining manufacturing feasibility. The metal layer is deposited on the resin substrate before forming the TFT structure, enabling subsequent high-temperature processing without damaging the resin substrate.
3Weight of moving object
If a transference process is used to transfer TFT elements from glass substrate to resin substrate, then flexibility is achieved, but the manufacturing process becomes complicated
Solution Approach 1:
Instead of forming TFTs on glass and then transferring them to resin substrate, the patent inverts the process by directly forming TFTs on the resin substrate. This eliminates the transference process and its associated complexity, including substrate peeling, adhesion layer formation, and transfer steps. The low-melting-point metal layer enables this direct formation approach by serving as a temporary support that is removed after TFT formation.
4Productivity
If direct formation on resin substrate is used, then productivity is improved, but TFT element properties deteriorate due to inferior heat resistance
Solution Approach 1:
The patent changes the thermal properties of the substrate system by introducing a low-melting-point metal layer with specific thermal characteristics. This layer allows the system to withstand higher temperatures during TFT formation without damaging the resin substrate, thereby improving TFT element properties while maintaining the productivity benefits of direct formation on resin substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, enhances productivity, and improves TFT element properties by enabling high-temperature processing without the need for substrate peeling, resulting in more reliable and efficient flexible semiconductor devices.
Implementation Method 1
forming an electrode from the metal foil by etching the metal foil
Implementation Method 2
improves TFT element properties by enabling high-temperature processing without the need for substrate peeling, resulting in more reliable and efficient flexible semiconductor devices
Implementation Method 3
allowing for high-temperature processing and improved TFT properties through thermal or laser annealing
Data Source
AI summary
A method for manufacturing a flexible semiconductor device includes (i) forming an insulating film on the upper surface of metal foil, (ii) forming an extraction electrode pattern on the upper surface of the metal foil, (iii) forming a semiconductor layer on the insulating film such that the semiconductor layer is in contact with the extraction electrode pattern, (iv) forming a sealing resin layer on the upper surface of the metal foil such that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) forming electrodes by etching the metal foil, the metal foil being used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). The metal foil need not be stripped, and a high-temperature process can be used.