Flexible Semiconductor Device Stress Absorbing Trenches
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Solution Overview
Problem
Conventional flexible display panels suffer from poor flexibility due to stress concentration at the thin film transistor, leading to cracking and deterioration of thin film transistor characteristics and capacitance, as the stress distribution is not effectively managed, and the actual stress neutral axis often deviates from the designed location.
Innovation Solution
A semiconductor device structure comprising a flexible substrate, a barrier layer, a heat insulating layer with low thermal conductivity, a device layer, a dielectric material layer with trenches, and a stress absorbing layer that fills into these trenches, improving stress distribution and flexibility by allowing elastic deformation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If conventional flexible panel structure is used, then the panel can be made flexible and thin, but stress concentrates at the thin film transistor causing cracking and deterioration
Solution Approach 1:
The patent introduces a stress neutral axis layer with specific mechanical properties (Young's modulus between 1-10 GPa) positioned at the stress neutral axis location. This layer has different mechanical characteristics than surrounding layers, creating a localized zone that specifically addresses stress concentration at the thin film transistor while maintaining overall panel flexibility.
Solution Approach 2:
The patent creates a composite structure by combining the stress neutral axis layer with other panel layers (substrate, encapsulation, display elements). This multi-layer composite design allows each layer to contribute specific properties, with the stress neutral axis layer providing stress distribution while other layers provide flexibility and functionality.
2Reliability
If important components are placed at the stress neutral axis region to improve stress distribution, then stress concentration is reduced, but the panel assembly becomes overly complicated and the actual stress neutral axis deviates from design
Solution Approach 1:
The stress neutral axis layer serves multiple functions simultaneously: it acts as a structural element for stress distribution, provides a platform for component placement, and maintains the overall panel flexibility. This multi-functionality reduces the need for separate dedicated stress management components, simplifying the overall assembly.
Solution Approach 2:
The patent specifies a particular Young's modulus range (1-10 GPa) for the stress neutral axis layer to optimize its stress distribution capability. By controlling this material parameter, the layer effectively manages stress without requiring complex structural modifications or additional components.
3Ease of operation
If the panel is made thinner and more flexible, then flexibility and portability are improved, but stress concentration increases leading to film layer cracking
Solution Approach 1:
The patent employs a thin-film-based stress neutral axis layer that maintains panel thinness and flexibility while providing stress distribution. This layer is integrated within the thin-film structure of the flexible panel, ensuring that the overall panel remains thin and flexible without compromising film layer integrity through stress concentration.
Solution Approach 2:
The stress neutral axis layer creates a localized zone with optimized mechanical properties specifically at the stress neutral axis position. This localized intervention provides enhanced stress distribution capability without increasing the overall panel thickness, maintaining thinness and flexibility while preventing cracking.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure enhances the flexibility of semiconductor devices, reducing stress concentration and preventing cracking, thereby maintaining the integrity of thin film transistors and capacitance during bending.
Implementation Method 1
the heat insulating layer has a thermal conductivity of less than 20 W/mK
Implementation Method 2
the stress absorbing layer fills into the at least one trench, allowing elastic deformation and reducing stress concentration
Data Source
AI summary
A semiconductor device is provided to include a flexible substrate, a barrier layer, a heat insulating layer, a device layer, a dielectric material later and a stress absorbing layer. The barrier layer is disposed on the flexible substrate. The heat insulating layer is disposed on the barrier layer, wherein the heat insulating layer has a thermal conductivity of less than 20 W/mK. The device layer is disposed on the heat insulating layer. The dielectric material layer is disposed on the device layer, and the dielectric material layer and the heat insulating layer include at least one trench. The stress absorbing layer is disposed on the dielectric material layer, and the stress absorbing layer fills into the at least one trench.