Flexible Display Substrate with Grooved Gate Insulation

The substrate is divided into a bendable region and an unbendable region with distinct boundaries. The unbendable edge extends in the first direction to provide structural support while the bendable region allows flexibility. This segmentation enables the substrate to maintain overall flexibility while protecting critical transistor regions from bending damage.

Different regions of the substrate are given different mechanical properties. The unbendable region provides rigidity and structural integrity, while the bendable region provides flexibility. The transistor active layers are specifically oriented parallel to the bending direction in regions subject to stress, creating local quality variations that resolve the contradiction between flexibility and reliability.

Grooves are formed in the gate insulation layer and filled with organic material before the bending process. This pre-prepared cushioning structure reduces stress concentration on the inorganic material layers during small radius bending, protecting them from damage while enabling flexible operation.

The gate insulation layer with grooves filled with organic material creates a flexible structure that can accommodate small radius bending without cracking the inorganic material layers. The organic material acts as a flexible buffer that maintains structural integrity during bending operations.

The substrate is segmented into bendable and unbendable regions, allowing multiple bending operations to be performed on the bendable region while the unbendable region with transistors remains protected. This enables shape configurability without compromising transistor performance stability.

The transistor active layers are oriented parallel to the bending direction in specific regions, creating local quality that allows these regions to accommodate bending stress without performance degradation. This enables multiple bending operations while maintaining device characteristic stability in protected regions.

The active layers are oriented parallel to the bending direction specifically in the bendable region where stress occurs, while maintaining conventional layouts in unbendable regions. This localized approach improves reliability without unnecessarily increasing overall layout complexity.

The solution addresses the stress issue by changing the orientation dimension of the active layers rather than adding complex protective structures. By orienting active layers parallel to the bending direction, the design utilizes dimensional arrangement to reduce stress while keeping the layout relatively simple.