Solid-State Devices TRIZ Cases

A variable resistance memory device uses a protective nitride layer with varying nitrogen content to shield the cell.

Routing first traces within the display area reduces frame width while increasing manufacturing complexity.

Curved interlayer insulating surfaces extend phase change line lengths between heating electrodes in memory devices.

A FinFET body contact layer electrically couples to the gate electrode to enable threshold voltage adjustment.

A power line overlaps capacitor electrodes to form storage capacitors in an organic light emitting diode display device.

Segmented charge storage structures in 3D NAND flash memory reduce cell interference through dielectric isolation.

A transflective LCD panel design positions a storage capacitor beneath the data line to increase the aperture ratio.

A vertical interconnection layer links pads to stacked transparent electrodes, eliminating power circuit regions and shrinking the image sensor area.

A power module uses a recessed step portion to guide resin flow during transfer molding.

Assigns storage elements to erase groups and adjusts control gate voltages to equalize erase speed across the memory array.

Ion source layer prevents chalcogenide crystallization during high temperature processing.

Interconnect shield blocks hydrogen ions from neutralizing floating gate charge, reducing device mismatch and improving data retention.

Segmenting the luminescent layer into hosts with different transport properties resolves the trade-off between luminescent intensity and device lifetime.

A carrier-reservoir structure couples with ferroelectric transistor body regions via extension paths.

A display device incorporates a shielding conductive layer to block capacitive coupling, reducing crosstalk visibility during high-speed operation.

A mask manufacturing method uses a reflecting plate and photoresist layer to guide laser ablation for precise pattern removal.

Multi-layer dielectric grid isolation reduces pixel crosstalk and noise while enhancing signal-to-noise ratio in image sensors.

Vertical gate wrapping on non-quantized SOI fins expands effective channel width to boost current capacity without increasing device area.

A correlated electron switch utilizes a Mott transition to achieve variable resistance and capacitance states.

Embossed conductive reflective layer in OLED pad electrodes enhances light diffusion for improved curing efficiency.

Integrating alignment mark formation with thin film transistor fabrication reduces mask count and improves production yield.

Dual connection units in a test socket evaluate top and bottom terminal states simultaneously, preventing premature discarding of non-defective upper packages.

Hybrid femtosecond laser ablation and plasma etching removes scribe damage to improve die strength without costly lithography masking.

A cover inorganic layer contacts inner surfaces of openings and recesses within a display panel encapsulation structure.

Segmented planarization layer with ink-repellent emission regions and adhesive spacer zones stabilizes array substrates in inkjet-printed displays.

CdS shells on PbS cores reduce quenching from metal oxide layers, boosting peak external quantum efficiency by up to 100-fold.

Segmented oxide shells lower injection barriers and reduce surface defects, boosting luminescence efficiency.

A conformal conducting layer separates vertical thin-film transistors to reduce leakage currents and lower fabrication costs.

A tensioning device uses an electromagnet and current control unit to adjust mask plate deformation.

Segmented light-absorption layers reduce environmental reflection without sacrificing brightness or service lifetime.

Segmented laser groove formation prevents Low-k film peeling and undercut phenomena during wafer dicing.

A reflection partition surrounds blue LEDs in a backlight device to suppress light leakage and maintain uniform chromaticity.

A ring-shaped rough surface on the carrier substrate guides phosphor glue into a protuberant top portion to increase light extraction.

Isotropic etching and high-index deposition create embedded microlenses that eliminate air gaps and enable high-temperature back-end-of-line processing.

Graded indium-gallium-zinc oxide layer reduces carrier stagnation at the interface to enhance photoresponsiveness and suppress dark current generation.

Embedding a protective diode chip in the molded body eliminates separate through contacts and rear-side wiring to reduce production costs.

Panel dispensing of encapsulant over submounts eliminates individual molding, reducing production time while maintaining structural integrity.

A heated bond head melts solder on a die to press it onto a cooler substrate, enabling rapid solidification.

An acidic etchant composition uses copper ions and organic acids to precisely remove multilayered films without hydrogen peroxide.

Sequential LUMO energy levels in the hole blocking layer increase electron and hole recombination, extending OLED service life.

A nanomagnet sandwiched between mirror-image spin-Hall layers generates perpendicular torque for deterministic switching.

Three-terminal Ovonic Threshold Switches drive phase change memory arrays at the same pitch, eliminating large driver devices and complex metal wire routing.

Merging common line formation with gate lines reduces mask count, preventing electrical shorts and improving aperture ratio.

Laser-melted frit barricades seal OLED devices against water vapor and oxygen permeation, extending service life without affecting light emission efficiency.

Transfer semiconductor thin films onto driving circuits to enable high crystallinity without thermal damage.

An SCR-LDMOS composite structure adjusts sustaining voltage through specific implanted regions to enhance electrostatic discharge protection.

A voltage supply line with variable width reduces parasitic capacitance on an array substrate.

Voids in metal solder pads increase contact area, resolving weak adhesion and brittle fracture issues.

Segmented waveguide layers create electrical barriers that block carrier conduction paths between photodiodes, resolving unintended coupling.

Sloped trench sidewalls in the interlayer dielectric enable uniform photoresist coating and reduce light path length to photodiodes.

Atmospheric pressure plasma deposition creates pinhole-free diffusion barriers on optoelectronic components, eliminating moisture ingress through defects.

Ion damage isolates pixels in a barrier photodetector, eliminating etch defects and boosting yield.

A light-emitting diode structure featuring a composite n-type charge generating layer doped with inorganic materials.

Nickel-induced crystallization creates varying grain sizes in amorphous silicon, eliminating separate manufacturing steps for switching and driving transistors.

Direct bonding of wavelength conversion portions to the cell array removes partition structures, reducing manufacturing costs and enabling miniaturization.

A high dielectric constant buffer layer reduces interfacial charge trapping to improve endurance and lower operation voltage.

A dual mask lithography process patterns hard masks to increase design density in semiconductor fabrication.

A display device uses an insulating layer with inverted-conical depressions to reflect light and improve extraction efficiency.

A bandgap engineered SONOS memory cell employs a composite dielectric stack to resolve the speed-reliability tradeoff in erase operations.

Potential drain regions accumulate interface defect electrons to reduce dark level differences between light-receiving and light-shielding areas.

A halogen-containing amorphous solid oxide thin film with a crosslinked-polyhedra-network structure forms a dense barrier layer.

Segmented oxide layers with an oxygen reservoir stabilize resistance switching by dominating the local region and avoiding parasitic resistance effects.

Segmented pixel electrodes feature supplementary tilt angles that balance electric fields, eliminating dark stripes while maintaining high contrast.

An aluminum-cobalt-copper nano-quasicrystal scattering layer boosts efficiency without complex manufacturing steps.

An array substrate places photosensors in non-light emitting regions of a partially transparent area to enable full-screen display integration.

Asymmetric shading patterns compensate for spatial asymmetry in pixel arrays, eliminating color cross-talk and image artifacts.

Segmented light blocking layers and vertical walls block external light in transparent displays, preventing thin film transistor threshold voltage shifts.

Poly(3-alkynylthiophene) thin film transistors resist oxidative doping in ambient air, maintaining high current on/off ratios without vacuum processing.

Selective etching removes blocking dielectric from monolithic three-dimensional NAND strings without damaging control gates.

A photoresist composition forms patterns with high profile angles using specific diazonaphthoquinone photosensitizers.

A resistive random access memory circuit merges cells and transistors to increase bit currents in the low resistance state.

Separate tile configurations optimize pattern density, resolving the trade-off between CMP uniformity and film quality.

Cyclic boronic acid minimizes surface defects on inorganic luminescent particles, reducing driving voltage and improving luminous efficiency.

Segmented pixel defining structures with varying inclination angles reduce nozzle count and calibration time while ensuring uniform organic layer drying.

Retardance layers depolarize display light to resolve cross-polarization conflicts with sunglasses while maintaining biometric sensing.

Epitaxial growth raises back gate contacts on silicon-on-insulator transistors, eliminating polysilicon filling steps that damage buried oxide layers.

Segmented upper and lower gates prevent light intrusion into the semiconductor layer, enhancing electron mobility and transistor reliability.

Spectral analysis of polarized light reflects from sealing regions to detect bonding errors, preventing moisture permeation and extending device lifetime.

A protective film covers dam side walls in flexible displays to distribute stress, preventing anode layer peeling at corners.

Stacking transistors vertically reduces driver IC area and width without sacrificing operation speed required for high definition displays.

A light-emitting element incorporates a non-oxide insulative layer with a refractive index below 1.4 to enhance current diffusion and ohmic contact.

A three-layer organic photovoltaic cell structure enables exciton dissociation and charge transfer across multiple interfaces.

Segmented mask layers with inclined surfaces prevent blockage during high aspect ratio hole etching.

A flexible display panel integrates a conductive layer between substrate layers to manage static electricity and reduce mechanical stress.

Segmenting the source into parallel electrodes reduces internal current density and thermal stress, enhancing active device stability.

Composite pixelated patterned templates decouple lattice mismatch and thermal expansion to minimize strain during high-quality semiconductor growth.

A bridge line structure provides lateral electrical connection between contact via structures and memory stack structures in three-dimensional semiconductor devices.

Asymmetric electrode geometry minimizes misaligned liquid-crystal molecules, resolving brightness non-uniformity and dark stripes in displays.

An organometallic compound in the emission layer ensures balanced hole and electron injection.

A light sensitive material forms gate insulation and dielectric layers through exposure and development processes.

A single-layer ceramic LED package uses through-substrate heatsink holes to conduct thermal energy away from the chip.

Titanium-containing polymer films absorb back reflection to resolve thin film interference and reflective notching during semiconductor pattern transfer.

Parallel segmented storage electrodes raise capacitance without reducing the aperture ratio in array substrates.

A programmable logic device architecture distributes random access memory across logic blocks to optimize resource allocation.

A four-transistor OLED pixel circuit uses gate capacitance to store voltage signals without dedicated storage capacitors.

Grooves in the gate insulation layer filled with organic material reduce stress on inorganic layers during bending, preventing device characteristic shifts.

A dual diaphragm microphone unit integrates omnidirectional and bidirectional functions within a single sealed case structure.

An oxide semiconductor top electrode enhances capacitor functionality in thin film transistor substrates.

A thin film transistor employs a capping layer to regulate metal catalyst diffusion, reducing leakage current in the channel region.

Copper blend I-VII compound semiconductor barrier layers reduce internal fields to enhance quantum efficiency in light-emitting devices.