Light Sensitive Material Gate Insulation Layer Manufacturing
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Solution Overview
Problem
The conventional manufacturing process of thin film transistors requires numerous photolithography steps, making it time-consuming and costly due to the need for multiple photomasks and photoresist processes.
Innovation Solution
A manufacturing method using light sensitive materials to form the gate insulation and dielectric layers without etching or photoresist removal, reducing the number of manufacturing steps by integrating these layers through exposure and development processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography processes are used to manufacture thin film transistors, then manufacturing precision is achieved, but manufacturing complexity and time increase significantly
Solution Approach 1:
The patent merges the gate insulation layer and dielectric layer formation into a single photolithography process. The light-sensitive material serves dual purposes: forming the gate insulation layer in unexposed regions and forming the dielectric layer in exposed regions, eliminating the need for separate photoresist application and removal steps for each layer.
Solution Approach 2:
The light-sensitive material performs multiple functions: it acts as both the gate insulation layer material and the dielectric layer material, and serves as the photoresist for patterning both layers simultaneously. This multi-functionality reduces the number of manufacturing steps while maintaining structural precision.
2Manufacturing precision
If multiple photolithography processes are used, then manufacturing precision is maintained, but manufacturing time increases
Solution Approach 1:
Multiple layer formation steps (gate insulation layer and dielectric layer) are combined into a single photolithography exposure and development process. The single photomask patterns both layers simultaneously, reducing the number of sequential steps while maintaining alignment precision through one-time exposure.
Solution Approach 2:
The light-sensitive material is applied in advance to cover both the gate insulation layer and dielectric layer regions. The single photolithography process then simultaneously defines both layers, eliminating the need for multiple sequential photoresist applications and removals.
3Manufacturing precision
If conventional photoresist removal processes are used, then clean manufacturing is achieved, but manufacturing cost and time increase
Solution Approach 1:
The patent extracts and eliminates the photoresist removal step from the conventional manufacturing process. The light-sensitive material is designed to remain as part of the final device structure (forming the gate insulation and dielectric layers) rather than being removed as waste, thereby simplifying the process while maintaining layer definition precision.
Solution Approach 2:
Instead of discarding the photoresist material after use, the patent recovers and retains it as a functional component of the device. The light-sensitive material that would normally be removed is kept and transformed into the gate insulation layer and dielectric layer, eliminating waste removal steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach decreases the time and cost of manufacturing by simplifying the process and eliminating the need for photoresist removal, while maintaining the quality of the electronic device with improved electrical performance.
Implementation Method 1
removing a first portion of the first light sensitive material layer by using a first exposure and development process
Data Source
AI summary
A manufacturing method of an electronic device includes: providing a substrate; forming a source and a drain on the substrate; forming a semiconductor layer on the substrate; forming a first light sensitive material layer on the semiconductor layer; removing a first portion of the first light sensitive material layer by a first exposure and development process and maintaining a second portion of the first light sensitive material layer to serve as a first gate insulation layer; patterning the semiconductor layer to form a channel layer below the first gate insulation layer; forming a second light sensitive material layer on the substrate; removing a third portion of the second light sensitive material layer by a second exposure and development process to expose at least a part of the first gate insulation layer; and forming a first gate on the first gate insulation layer. An electronic device is also provided.


