Photoresist Composition for High Profile Angle Patterning
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In photolithography processes for manufacturing printed circuit boards, semiconductor wafers, and LCD panels, the high cost and precision requirements of photomasks necessitate the development of a photoresist composition that can form patterns with high profile angles without using conventional photomasks, particularly for digital exposure methods using H-line light.
Innovation Solution
A photoresist composition comprising an alkali-soluble resin, a photosensitizer with specific diazonaphthoquinone compounds, and a solvent, which is exposed to light to form a pattern with a high profile angle, allowing for the formation of a photoresist pattern that can be used as an etch mask without the need for photomasks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photomasks are used for photolithography, then high precision patterning is achieved, but manufacturing cost increases and process complexity increases
Solution Approach 1:
The patent uses a digital micromirror device to create a digital mask that copies the circuit pattern directly onto the photoresist film through selective light reflection, eliminating the need for physical photomasks. This digital copying approach maintains high patterning precision while significantly reducing manufacturing costs and process complexity
Solution Approach 2:
The patent replaces the mechanical photomask system with a digital optical system using a spatial light modulator and digitally controlled light source. This substitution eliminates the need for physical mask fabrication and handling while achieving equivalent or superior patterning precision through software-controlled light modulation
2Ease of manufacture
If digital exposure method is used without photomasks, then manufacturing cost decreases and process complexity decreases, but forming patterns with high profile angle becomes difficult
Solution Approach 1:
The patent modifies the chemical parameters of the photoresist composition by incorporating specific alkali-soluble resins with controlled molecular weights and glass transition temperatures, along with optimized photosensitizer concentrations. These parameter changes enable the photoresist to form high profile angle patterns during development while maintaining compatibility with digital exposure methods
Solution Approach 2:
The patent creates a composite photoresist system combining alkali-soluble resin, specifically optimized photosensitizers, and solvent in precise ratios. This composite formulation works synergistically to enable high profile angle formation through controlled solubility changes during development, achieving vertical wall angles that were previously only possible with photomask-based methods
3Duration of action of stationary object
If H-line light source is used for digital exposure, then micromirror deterioration is prevented, but photoresist sensitivity must be increased to form high profile angle patterns
Solution Approach 1:
The patent selects photosensitizers with absorption maxima specifically matched to the H-line wavelength (405 nm), optimizing their molecular structure to maximize light absorption efficiency. This parameter optimization enables the photoresist to achieve sufficient sensitivity for high profile angle formation using H-line light, which extends micromirror lifespan by avoiding UV damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively forms patterns with high profile angles, enhancing the precision and reducing the need for expensive photomasks, thereby improving the efficiency and cost-effectiveness of the photolithography process.
Implementation Method 1
a photosensitizer comprising a first compound comprising a diazonaphthoquinone represented by Formula 1 and a second compound comprising a diazonaphthoquinone represented by Formula 2
Data Source
AI summary
A photoresist composition is provided. The photoresist composition includes an alkali-soluble resin; a photosensitizer containing a first compound that contains a diazonaphthoquinone represented by Formula 1 and a second compound that contains a diazonaphthoquinone represented by Formula 2; and a solvent.andR1 is selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 4 carbons, an alkenyl group having 2 to 4 carbons, a cycloalkyl group having 3 to 8 carbons, and an aryl group having 6 to 12 carbons, and R2 is selected from the group consisting of Cl, F, Br, and I.