Solid-State Imaging Device Manufacturing via Substrate Transfer

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Solution Overview

Problem

Existing methods for manufacturing solid-state imaging devices using film forming processes struggle to achieve high crystallinity in semiconductor thin films for photoelectric conversion sections without damaging underlying driving circuits and electrodes, especially when high-temperature processes are involved.

Innovation Solution

The method involves forming a semiconductor thin film on a first substrate with good crystallinity, then transferring it onto a second substrate with driving circuits, allowing for desired film forming and annealing temperatures without affecting the circuits, and finally laminating the photoelectric conversion sections onto the substrate with the driving circuits.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If film forming process at high temperature or crystallization annealing is conducted to obtain semiconductor thin film with good crystallinity, then the crystallinity and photoelectric conversion efficiency are improved, but the circuit sections and lower electrode layers beneath the semiconductor thin film are damaged through melting

Engineering Contradiction:

Improvecrystallinity of semiconductor thin filmVSAvoidintegrity of circuit sections and electrode layers

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

The manufacturing process is divided into two independent stages: first forming the semiconductor thin film on a first substrate, then transferring it to a second substrate containing the circuit sections. This segmentation allows high-temperature processing to be performed on the first substrate without exposing the circuit sections to damaging temperatures, thereby resolving the contradiction between achieving high crystallinity and protecting the circuit integrity.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The first substrate acts as an intermediary carrier that enables high-temperature film forming and annealing processes. The semiconductor thin film is formed and crystallized on this intermediate substrate, then transferred to the final substrate with circuit sections. This intermediary approach allows the circuit sections to remain protected while still achieving the desired crystallinity through high-temperature processing.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Device complexity

If semiconductor thin film is formed on the upper side of semiconductor substrate with circuit sections and lower electrode layers, then the stacked structure is achieved, but the semiconductor thin film cannot be formed with high crystallinity without damaging the underlying circuits

Engineering Contradiction:

Improvestacked structure of solid-state imaging deviceVSAvoidcrystallinity of semiconductor thin film

Core Design Contradiction:

Device complexityVSManufacturing precision

Solution Approach 1:

The semiconductor thin film is preliminarily formed and crystallized on the first substrate before being transferred to the second substrate with circuit sections. This preliminary action allows the thin film to achieve high crystallinity in advance, without the presence of the circuit sections that would be damaged by high-temperature processing. The transfer step then completes the stacked structure while preserving both the crystallinity and circuit integrity.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the creation of solid-state imaging devices with high photoelectric conversion efficiency and excellent imaging characteristics by ensuring the semiconductor thin film with good crystallinity is stacked on top of the driving circuits without damaging them, resulting in improved reliability and performance.

Implementation Method 1

a semiconductor thin film which is to be photoelectric conversion sections is formed on the face side of a first substrate

Methodology Applied

Scientific EffectFilm forming process: Deposition (physical)

Implementation Method 2

crystallization annealing after film forming process is conducted for the purpose of obtaining a semiconductor thin film with good crystallinity

Methodology Applied

Scientific EffectCrystallization annealing: Annealing

Implementation Method 3

the first substrate and the second substrate are laminated on each other in a condition in which the semiconductor thin film is connected to the driving circuits

Methodology Applied

Scientific EffectLamination: Lamination

Data Source

PatentUS9269735B2Method of manufacturing solid-state imaging device, solid-state imaging device, and electronic apparatus

Publication Date: 2016.02.23 SONY GROUP CORP

AI summary

The present disclosure provides a method of manufacturing a solid-state imaging device, including, forming on a first substrate a semiconductor thin film which is to be photoelectric conversion sections, forming driving circuits on a face side of a second substrate, laminating the first substrate and the second substrate by disposing the first substrate and second substrate opposite to each other in a condition in which the semiconductor thin film is connected to the driving circuits, and removing the first substrate from the semiconductor thin film in a condition in which the semiconductor thin film is left on the second substrate side.