PbS-CdS Core-Shell Nanocrystals for Near-Infrared Emission

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Solution Overview

Problem

Near-infrared light-emitting devices using semiconductor nanocrystals have historically exhibited low performance compared to visible-emitting devices, with limited peak external quantum efficiency and power conversion efficiency.

Innovation Solution

The use of PbS-CdS core-shell semiconductor nanocrystals, where a CdS overcoating reduces quenching from adjacent metal oxide layers, enhancing peak external quantum efficiency and power conversion efficiency by up to 50- to 100-fold, and increasing radiant intensity by up to 150 times.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If semiconductor nanocrystals are used in near-infrared light-emitting devices, then the device can emit light in the near-infrared spectral region, but the performance (peak external quantum efficiency and power conversion efficiency) has historically been low compared to visible-emitting devices

Engineering Contradiction:
ImproveperformanceVSAvoidpeak external quantum efficiency
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent employs core-shell semiconductor nanocrystals with a PbS core and CdS shell, creating a composite material structure. The PbS core provides near-infrared emission, while the CdS shell passivates surface defects and reduces non-radiative recombination. This composite structure resolves the contradiction by combining materials with complementary properties to achieve both near-infrared emission and high efficiency, overcoming the historical limitation of low performance in near-infrared devices.

Inventive Principle:
Principle #40Composite materials

2Device complexity

If metal oxide layers are used as adjacent layers in the device, then the device structure is formed, but quenching occurs that reduces the efficiency

Engineering Contradiction:
Improvedevice structureVSAvoidquenching
Core Design Contradiction:
Device complexityVSLoss of energy

Solution Approach 1:

The CdS shell acts as an intermediary layer between the PbS core and the metal oxide adjacent layers. It provides a protective barrier that prevents direct interaction between the metal oxide and the PbS core, thereby reducing quenching effects. The shell mediates the interface between different materials, allowing the device structure to be maintained while minimizing energy loss through quenching.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent applies local quality by creating a shell with specific properties (CdS material with appropriate band structure) only at the surface region of the nanocrystal where interaction with metal oxide occurs. This localized modification addresses the quenching problem at the interface without altering the bulk properties of the PbS core that are responsible for near-infrared emission, thus resolving the contradiction between device structure and energy loss.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The implementation of PbS-CdS core-shell nanocrystals in near-infrared light-emitting devices significantly improves peak external quantum efficiency and power conversion efficiency, surpassing previous records and approaching commercial near-infrared LED performance, with enhanced stability and photostability.

Implementation Method 1

the plurality of semiconductor nanocrystals that includes an overcoating can reduce quenching from a metal oxide in an adjacent layer of the plurality of semiconductor nanocrystals

Methodology Applied
Scientific EffectQuenching reduction:

Implementation Method 2

a first electrode, a second electrode, a plurality of semiconductor nanocrystals disposed between the first electrode and the second electrode, wherein the plurality of semiconductor nanocrystals emit at wavelengths beyond 1 μm

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS9935240B2Near-infrared light emitting device using semiconductor nanocrystals
Publication Date: 2018.04.03 MASSACHUSETTS INST OF TECH
  • US9935240B2 patent drawing
  • US9935240B2 patent drawing
  • US9935240B2 patent drawing

AI summary

A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 μm. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.