Flexible Superstrate Modulation for Semiconductor Planarization

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing planarization techniques in semiconductor fabrication face defects such as non-fill defects due to the interaction between the superstrate and dispense material on the substrate, particularly during whole wafer processing.

Innovation Solution

An apparatus and method involving a substrate holder and a superstrate holder with a gas supply system that modulates the shape of the superstrate to create distinct gaps, directing gas flow and reducing resistance between the substrate and superstrate, thereby controlling the atmosphere and preventing gas trapping.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the superstrate makes contact with the dispense material on the substrate, then planarization is achieved, but non-fill defects arise

Engineering Contradiction:
Improveplanarization qualityVSAvoiddefect rate
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The gas supply system introduces gas into the space between the superstrate and substrate before the superstrate contacts the dispense material. This preliminary gas introduction prevents gas trapping and non-fill defects by ensuring the space is properly filled and controlled before the critical contact moment, thereby improving both planarization quality and reducing defects

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The system creates a controlled atmosphere in the gap between the superstrate and substrate by introducing gas (such as nitrogen or other inert gases). This inert environment prevents unwanted chemical reactions and gas trapping that would cause non-fill defects, while maintaining the necessary conditions for successful planarization when the superstrate contacts the material

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

2Reliability

If gas is introduced between the superstrate and substrate, then non-fill defects are reduced, but the system complexity increases

Engineering Contradiction:
Improvedefect rateVSAvoidsystem complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The gas supply system acts as an intermediary mechanism that introduces controlled gas flow between the superstrate and substrate. By using gas as a mediator to fill the gap and prevent gas trapping, the system achieves reliable planarization without requiring complex mechanical adjustment mechanisms, thus managing system complexity while improving reliability

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The invention employs pneumatic principles by using gas flow to control the environment between the superstrate and substrate. The gas supply system utilizes pressure differential and gas flow dynamics to achieve proper filling and prevent defects, which is simpler and more reliable than complex mechanical control systems

Inventive Principle:
Principle #29Pneumatics and hydraulics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively mitigates non-fill defects by ensuring uniform gas distribution and filling, enhancing the planarization process and reducing defects in semiconductor wafer fabrication.

Implementation Method 1

flowing a gas into a region between the first gap and the second gap. The gas may flow between the surface of the substrate and the superstrate

Methodology Applied
Scientific EffectGas flow:

Data Source

PatentUS11198235B2Flexible mask modulation for controlling atmosphere between mask and substrate and methods of using the same
Publication Date: 2021.12.14 CANON KK
  • US11198235B2 patent drawing
  • US11198235B2 patent drawing
  • US11198235B2 patent drawing

AI summary

An apparatus may include a substrate holder configured to hold a substrate. The substrate holder may include a first chucking region having a first area and an adjacent region extending from the chucking region. The apparatus may also include a superstrate holder configured to hold a superstrate. The superstrate holder may include a second chucking region having a second area. The second area may be larger than the first area and the superstrate holder faces the substrate holder forming a first gap between the adjacent region surface and the superstrate and a second gap between the substrate and the superstrate. The apparatus may also include a gas supply system between the first gap and the second gap. The superstrate holder may alter a shape of the held superstrate to decrease the first gap and increase the second gap.