Flip Chip Laser Diode Package Structure Reducing Width

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional laser diodes have a wide width due to the bonding wire structure, making it difficult to reduce their size effectively.

Innovation Solution

A flip chip type laser diode package structure is developed, where the first and second electrodes are directly bonded to a package substrate, eliminating the need for bonding wires and allowing the electrodes to be disposed along the extending direction of the ridge mesa, reducing the overall width of the laser diode.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Length of moving object

If bonding wire structure is used for electrical connection, then electrical connectivity is achieved, but device width increases

Engineering Contradiction:
Improvedevice widthVSAvoidconnection reliability
Core Design Contradiction:
Length of moving objectVSReliability

Solution Approach 1:

The patent removes the bonding wire structure from the laser diode design, extracting the problematic element that caused increased device width. By eliminating the bonding wires and their associated solder pads, the device width is significantly reduced while electrical connectivity is maintained through direct electrode-substrate bonding

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

Instead of using bonding wires to connect electrodes to external circuits (conventional approach), the patent inverts the connection method by directly bonding electrodes to the package substrate. This inversion of the connection architecture eliminates the need for bonding wires and reduces overall device width

Inventive Principle:
Principle #13The other way round (Inversion)

2Area of stationary object

If bonding wire structure is used, then electrical connection is established, but space occupation increases

Engineering Contradiction:
Improvespace occupationVSAvoidmanufacturing complexity
Core Design Contradiction:
Area of stationary objectVSEase of manufacture

Solution Approach 1:

The patent merges the electrical connection function directly into the package substrate by bonding electrodes to substrate pads. This consolidation eliminates separate bonding wire components and their associated solder pads, reducing total space occupation and simplifying the manufacturing process

Inventive Principle:
Principle #5Merging (Combining)

3Length of moving object

If conventional laser diode structure is used, then electrical connectivity is achieved through bonding wires, but device miniaturization is limited

Engineering Contradiction:
Improvedevice widthVSAvoidstructure complexity
Core Design Contradiction:
Length of moving objectVSDevice complexity

Solution Approach 1:

The patent extracts and removes the bonding wire structure from the conventional laser diode design. By eliminating bonding wires, solder pads, and associated interconnection elements, the device width is reduced to less than 100 micrometers while maintaining electrical functionality through direct electrode-substrate bonding

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent transitions from a three-dimensional bonding wire connection approach to a planar direct-bonding approach. By flattening the connection architecture and bonding electrodes directly to the substrate in the same plane, the device achieves reduced width while maintaining electrical connectivity

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS9722393B2Laser diode chip and flip chip type laser diode package structure
Publication Date: 2017.08.01 PLAYNITRIDE DISPLAY CO LTD
  • US9722393B2 patent drawing
  • US9722393B2 patent drawing
  • US9722393B2 patent drawing

AI summary

A flip chip type laser diode includes a first substrate, a first semiconductor layer disposed on the first substrate, an emitting layer disposed on one part of the first semiconductor layer, a second semiconductor layer disposed on the emitting layer and forming a ridge mesa, a current conducting layer disposed on another part of the first semiconductor layer, a patterned insulating layer covering the second semiconductor layer and the current conducting layer and including a first zone and a second zone which respectively expose a part of the current conducting layer and a part of the second semiconductor layer, a first electrode and a second electrode respectively disposed on the first zone and the second zone. A projection of the ridge mesa projected to the first substrate covers a part of projections of the first electrode and the second electrode projected to the first substrate.