Dual diffraction gratings enable room-temperature operation by reducing electric current requirements and minimizing light loss in the active layer.
A light blocking layer on the front facet of an optoelectronic semiconductor laser suppresses substrate modes.
Sacrificial organic masks protect semiconductor layers during wet etching, preventing damage and maintaining low contact resistance in laser diodes.
An externally modulated system using a saturable absorber modulator operates below the gain peak wavelength to reduce noise and improve linearity.
A tunable laser uses a silicon-photonic switch to select narrow-band reflectors for discrete frequency tuning.
An inclined reflecting surface directs laser light while a connection member bonds the lid, maintaining reflectivity without film interference.
A two-dimensional photonic crystal surface emitting laser uses asymmetric modified refractive index region pairs to enhance interference effects.
Bonding laser diodes to submounts reduces thermal resistance, improving efficiency and lowering driving voltage.
Separating the ridge waveguide into an active main section and a passive end section via a trench prevents carrier injection at the facet, eliminating temperature-induced degradation while maintaining high optical power output.
An asymmetric light guide structure with a low-refractive-index layer improves power conversion efficiency during high output power operation.
A coupled cavity VCSEL uses a lateral feedback optical cavity to bias the vertical emission signal through an oxide aperture.
An n-p tunnel junction within a p-type semiconductor epitaxial structure creates an alloyed contact interface.
An InGaN layer with specific indium composition reduces piezoelectric fields in nitride semiconductor lasers.