N-P Tunnel Junction for Semiconductor Thermal Contact
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Solution Overview
Problem
Conventional high power optical semiconductor devices face thermal resistance limitations due to the thermal barrier at the p-type contact interface, which restricts efficient heat removal to the heat sink, leading to performance and reliability issues.
Innovation Solution
The introduction of a tunnel junction within the epitaxial structure of the p-type semiconductor, replacing the abrupt p-type contact with an alloyed n-type contact, facilitates improved heat transfer by aligning thermal and electrical transport mechanisms, reducing thermal resistance and eliminating the thermal barrier.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a p-type contact interface is used in conventional semiconductor devices, then electrical conductivity is achieved, but thermal resistance increases due to the thermal barrier at the interface
Solution Approach 1:
The patent changes the doping type parameter of the contact layer from p-type to n-type. This parameter change eliminates the thermal barrier effect that occurs at p-type contact interfaces, thereby reducing thermal resistance and improving heat removal efficiency while maintaining electrical conductivity
Solution Approach 2:
The patent introduces an n-type contact layer as an intermediary between the semiconductor active region and the external circuit. This n-type contact layer serves as a thermal conduit that facilitates heat flow from the semiconductor to the heat sink, replacing the conventional p-type contact that created thermal resistance
2Loss of energy
If direct contact between heat sink and semiconductor is made, then heat removal is facilitated, but thermal resistance remains high at the p-type contact interface
Solution Approach 1:
The patent changes the contact layer doping type from p-type to n-type to eliminate the thermal barrier, enabling efficient heat removal through the contact interface without introducing additional thermal resistance
Solution Approach 2:
The n-type contact layer performs multiple functions simultaneously: it provides electrical conductivity for current flow and serves as a thermal conduit for heat removal. This multi-functionality resolves the contradiction by making the same interface effective for both electrical and thermal transport
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances heat removal efficiency from the semiconductor to the heat sink, improving the performance and reliability of high power semiconductor devices by ensuring effective thermal management and reducing thermal resistance.
Implementation Method 1
An n-p tunnel junction is positioned within an epitaxial structure of the p-type semiconductor
Implementation Method 2
transferred at least a portion of the generated heat from the p-type semiconductor, through the n-p tunnel junction, and to a metal contact layer
Data Source
AI summary
A semiconductor apparatus with improved heat removal and improved heat flow to a heat sink is provided. The semiconductor apparatus includes a p-type semiconductor. An n-p tunnel junction is positioned within an epitaxial structure of the p-type semiconductor. A metal contact layer is connected to the n-p tunnel junction through an alloyed n-type contact interface. The n-p tunnel junction improves heat flow from the semiconductor through an alloyed contact interface formed between the tunnel junction and the metal contact layer which has lower thermal and electrical resistance in comparison to a conventional metallurgically abrupt interface of a p-type contact.