Flip-Chip Red LED Eliminates Wire-Bonding Volume
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Solution Overview
Problem
The existing red light emitting diodes in displays have a limited applicability due to their vertical structure, which requires a wire-bonding region, increasing the volume of the device and restricting its application.
Innovation Solution
A red light emitting diode is designed in a flip-chip configuration with an epitaxial stacked layer, electrodes, and pads, allowing electrical connection to an external substrate without a wire-bonding region, enabling reduced volume and improved heat dissipation through internal electrodes and pads.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a vertical structure red light emitting diode is used, then the light emitting function is achieved, but the device volume increases and applicability is limited due to wire-bonding requirements
Solution Approach 1:
The patent inverts the conventional vertical structure of red light emitting diodes by adopting a horizontal structure where the light emitting layer is disposed horizontally between first and second electrodes. This inversion eliminates the need for wire-bonding regions, thereby reducing device volume and improving adaptability for various display applications.
Solution Approach 2:
The patent transitions from a vertical three-dimensional structure to a horizontal planar structure. The light emitting layer is arranged horizontally rather than vertically, and electrodes are positioned at both ends of the horizontal light emitting layer, fundamentally changing the spatial dimensionality and eliminating the need for vertical wire-bonding connections.
2Ease of operation
If a wire-bonding region is arranged for connecting the red light emitting diode, then electrical connection is achieved, but the device volume increases and applicability is restricted
Solution Approach 1:
The patent extracts and eliminates the wire-bonding region from the device structure entirely. By designing horizontal electrodes at both ends of the light emitting layer that can be directly connected to external circuits, the patent removes the unnecessary wire-bonding component and its associated volume, while maintaining electrical connection functionality.
3Temperature
If internal electrodes and pads are used for heat dissipation, then heat dissipation efficiency is improved, but device structure becomes more complex
Solution Approach 1:
The patent designs the first and second electrodes to serve dual functions: electrical conduction and heat dissipation. These electrodes are positioned at both ends of the horizontal light emitting layer and extend to electrode pads, enabling them to simultaneously carry electrical current and conduct heat away from the light emitting layer, thereby improving heat dissipation without requiring separate dedicated heat dissipation structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The flip-chip configuration reduces the volume of light emitting diode devices, enhances applicability, and improves heat dissipation efficiency, making it suitable for compact display technologies.
Implementation Method 1
a light emitting layer (36) located between the first-type semiconductor layer (34) and the second-type semiconductor layer (38), and a main light emitting wavelength of the light emitting layer falls in a red light range
Data Source
AI summary
A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer. Furthermore, a manufacturing method of the red light emitting diode is also provided.