Multi-Bit Flip-Flop Layout to Reduce Coupling Capacitance

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Solution Overview

Problem

The miniaturization of integrated circuits leads to stricter design and manufacturing specifications, along with challenges in reliability, particularly due to increased coupling capacitance between conductive structures, which results in higher power consumption.

Innovation Solution

The configuration of a multi-bit flip-flop with offset conductive structures reduces coupling capacitance by increasing the distance between them, optimizing power consumption and area usage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If conductive structures are placed closer together to reduce area, then area usage is improved, but coupling capacitance increases leading to higher power consumption

Engineering Contradiction:
Improvearea usageVSAvoidpower consumption
Core Design Contradiction:
Area of stationary objectVSUse of energy by stationary object

Solution Approach 1:

The patent applies asymmetry by offsetting the second set of conductive structures from the first boundary and offsetting the third set of conductive structures from the second boundary. This asymmetric positioning creates unequal spacing patterns that reduce coupling capacitance between adjacent conductive structures while maintaining compact overall layout, thereby resolving the contradiction between area efficiency and power consumption.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The patent extends the conductive structures in the first direction (horizontal) while using offset positioning in the second direction (vertical) to manage spacing. This dimensional approach allows the structures to pack efficiently in one dimension while maintaining adequate separation in another dimension, reducing coupling capacitance without sacrificing area utilization.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Length of moving object

If miniaturization is pursued to reduce device size, then device dimensions are improved, but coupling capacitance between conductive structures increases

Engineering Contradiction:
Improvedevice sizeVSAvoidcoupling capacitance
Core Design Contradiction:
Length of moving objectVSObject-generated harmful factors

Solution Approach 1:

By implementing asymmetric offset positioning of conductive structures from boundaries, the patent creates non-uniform spacing that reduces coupling capacitance effects even as overall device dimensions are miniaturized. The offset distances are specifically configured to maximize separation between adjacent conductive structures while maintaining compact form factor.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The patent applies local quality by creating different spacing characteristics in different regions of the device. The offset positioning creates localized areas of increased separation between conductive structures where coupling capacitance is most problematic, while maintaining tighter packing in regions where it is less critical, thus reducing overall coupling capacitance in the miniaturized device.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20230402461A1Integrated circuit, system and method of forming the same
Publication Date: 2023.12.14 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20230402461A1 patent drawing
  • US20230402461A1 patent drawing
  • US20230402461A1 patent drawing

AI summary

An integrated circuit includes a set of power rails on a back-side of a substrate, a first flip-flop, a second flip-flop and a third flip-flop. The set of power rails extend in a first direction. The first flip-flop includes a first set of conductive structures extending in the first direction. The second flip-flop abuts the first flip-flop at a first boundary, and includes a second set of conductive structures extending in the first direction. The third flip-flop abuts the second flip-flop at a second boundary, and includes a third set of conductive structures extending in the first direction. The first, second and third flip-flop are on a first metal layer and are on a front-side of the substrate opposite from the back-side. The second set of conductive structures are offset from the first boundary and the second boundary in a second direction.