Flip LED Chip Simplified Manufacturing via Extended Electrode
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Solution Overview
Problem
The manufacturing process of conventional dual-ISO structural flip chips is complex, leading to high production costs and lower efficiency, with increased risks to the stability and reliability of the flip chip due to multiple photoetching processes.
Innovation Solution
A simplified manufacturing method for a flip light emitting chip that includes a substrate, an extended stacking layer, a reflective layer, a barrier layer, a bonding layer, and an extended electrode layer, where the bonding layer enhances the binding force between the barrier and insulating layers, and the extended electrode portion directly contacts the N-type semiconductor layer, eliminating the need for an N-type ohm contact layer and reducing the complexity of the process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional dual-ISO structural flip chip manufacturing process is used, then the binding force between barrier layer and insulating layer is improved, but the device complexity and manufacturing cost increase due to multiple photoetching processes
Solution Approach 1:
The patent extracts and eliminates unnecessary intermediate layers (N-type ohm contact layer and part of extended stacking layer) from the conventional structure. By removing these redundant layers, the manufacturing process is simplified from nine photoetching processes to fewer steps, while the bonding layer is introduced to maintain or enhance the binding force between the barrier layer and insulating layer.
Solution Approach 2:
The extended electrode layer is designed to serve multiple functions: it acts as both the electrode structure and the N-type ohm contact function that was previously performed by a separate layer. This multi-functionality reduces the number of layers and simplifies the manufacturing process while maintaining electrical performance.
2Manufacturing precision
If multiple photoetching processes are used to manufacture flip chip, then the manufacturing precision is improved, but the productivity decreases and production cost increases
Solution Approach 1:
The patent merges multiple photoetching processes into fewer steps by redesigning the layer structure. The extended electrode layer is formed to integrate functions that previously required separate processing steps, reducing the total number of photoetching operations from nine to fewer steps, thereby improving productivity while maintaining manufacturing precision.
3Reliability
If N-type ohm contact layer is included in the structure, then the electrical connection is improved, but the device complexity increases
Solution Approach 1:
The extended electrode layer is designed to perform multiple functions simultaneously: it serves as the electrode structure for electrical connection and also functions as the N-type ohm contact layer. This eliminates the need for a separate N-type ohm contact layer, reducing structural complexity while maintaining reliable electrical connection between the electrode and the N-type semiconductor layer.
Data Source
AI summary
A flip light emitting chip and a manufacturing method thereof are disclosed, wherein the flip light emitting chip comprises an N-type semiconductor layer, an active region, a P-type semiconductor layer, a reflective layer, a barrier layer, a bonding layer, a first insulating layer, an extended electrode layer, a second insulating layer, an N-type electrode, and a P-type electrode sequentially grown from a substrate. The first insulating layer has at least one first channel and at least one second channel. A first extended electrode portion and a second extended electrode portion of the extended electrode layer are respectively formed on the first insulating layer and extended to the N-type semiconductor layer via the first channel and to the barrier layer via the second channel. The second insulating layer has at least one third channel and at least one fourth channel. The N-type electrode extends to the first extended electrode portion through the third channel and the P-type electrode extends to the second extended electrode portion through the fourth channel.