Semiconductor Devices TRIZ Cases

Segmented cathode regions absorb minority carriers near guard rings, reducing recovery loss while maintaining hole absorption capability.

A nitride semiconductor element uses elongated sapphire substrate projections to guide lateral crystal growth.

An AlInGaN semiconductor layer structure reduces strain in nitride LEDs.

Connecting a nitride FET field plate to an auxiliary active region dissipates processing charges and prevents gate electrode short circuits.

Dual current spreading structures enable homogeneous electrical contact across semiconductor layers.

A depolarization layer raises the conduction band in GaN field effect transistors.

Edge insulation and doping eliminate parasitic transistors that cause the hump effect, reducing off-state current without adding manufacturing steps.

A trench semiconductor gate structure uses an intermediate insulating portion between upper and lower gates.

An asymmetric reflector portion directs light emission while reducing package thickness and preventing resin discoloration.

Vertical drain MOSFETs with trench gates reduce chip area while maintaining breakdown voltage.

Segmented YAG and Al2O3 barrier layers resolve thermal quenching in high-power LEDs while maintaining internal quantum efficiency.

Extended electrode layer contacts N-type semiconductor directly, reducing photoetching steps and production costs for flip light emitting chips.

A recessed gate structure with ultra-low-k spacer material minimizes direct contact area between the gate electrode and source layer.

External optical element couples to semiconductor light emitting structure circumferentially using specific refractive index matching.

P-type intermediate regions in a vertical power MOSFET alter electric field distribution, reducing parasitic capacitance while maintaining breakdown voltage.

Segmented edge termination concentrates the electric field to reduce leakage current and enhance reverse blocking capability.

Segmented current blocking and spreading layers optimize LED yield by preventing breakage while maintaining effective current distribution.

Gradient and non-gradient layers in the composite barrier counteract the built-in electric field, improving spatial overlap of electron and hole wave functions.

A semiconductor light emitting device uses a distributed Bragg reflector to enhance reflection characteristics.

Self-aligned spacer defines uniform off-FET channel length in metal oxide semiconductor-controlled thyristor devices.

A gate electrode overhangs a drain electrode above a tapered cap layer to disperse electric fields, suppress current collapse, and enhance breakdown voltage.

A narrow semiconductor mesa structure concentrates charge carriers to reduce on-state voltage drop in vertical devices.

A field effect transistor uses a beta-ray emitting channel adjusting member to form a depletion layer in the semiconductor channel region.

A semiconductor device uses overlapping source and drain pads with via holes to reduce parasitic capacitance.

Segmented doped regions in a silicon carbide diode lower specific differential resistance while maintaining low reverse leakage current.

Integrates a vertical P-N junction varactor with a high electron mobility transistor using shared gallium nitride layers.

Carrier redistribution region reduces impact ionization by diverting electrons, resolving the trade-off between safe operating area and breakdown voltage.

A light-emitting device uses a gradient energy gap in the well structure to modulate indium content and enhance internal quantum efficiency.

A semiconductor light emitting device uses a nano-scaled relief structure to extract light from the active layer.

Color conversion films transfer onto micro LEDs to realize pixel geometry without pre-formed phosphor layers.

Different texture profiles on the semiconductor and passivation layers reduce total internal reflection to increase luminous output.

A light-emitting device uses a reflective layer on a current block layer to redirect extracted photons toward the emission surface.

A heterostructure combines a semiconducting two-dimensional material layer with an oxide semiconductor layer to form a compact optoelectronic device.

A semiconductor light emitting device uses a superlattice structure with alternating nitride layers to enhance electron-hole recombination efficiency.

Graded buffer layers stabilize impurity distribution during annealing, preventing void deformation and maintaining breakdown voltage.

An alumina coating on a patterned silicon substrate prevents melt-back reactions and reduces surface cracking during GaN epitaxial growth.

Optimized depth and impurity concentration in SiC vertical MOSFET regions reduce on-state resistance while maintaining breakdown voltage.

A trench transistor uses a highly doped surface region to confine the conducting channel width within the semiconductor mesa.

A multi-channel tri-gate architecture uses three-dimensional electrodes to control buried channels in III-Nitride semiconductor structures.

Deep blocking junctions in a heavily doped drift region reduce on-state resistance and reverse leakage currents while maintaining high reverse blocking voltage.

A high-voltage LDMOS device uses deep N-wells and low-voltage N-wells as longitudinal voltage-withstanding buffer layers to enhance operating voltage.

An isolated impurity diffusion layer expands a depletion layer to reach the source, increasing surface withstand voltage without lowering threshold voltage.

A laterally diffused MOS transistor uses a charge balanced structure to optimize device performance.

Localizing high dopant concentration beneath the emitter perimeter delays the Kirk effect and enhances high-frequency performance.

Floating Schottky contacts segment the epitaxial layer to create a homogeneous electric field distribution.

Segmenting the substrate into corrugated patterns resolves manufacturing complexity while boosting optical output by 70 percent.

A trench gate semiconductor structure reduces on resistance through efficient hole discharge mechanisms.

A third diffusion region in an LDMOS device preforms a depletion layer to reduce electric field intensity near the trench insulating region.