Optoelectronic Semiconductor Device with Dual Current Spreading Structures
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Solution Overview
Problem
Existing optoelectronic semiconductor devices face challenges in uniformly contacting semiconductor layers without impairing the efficiency of the device, particularly in ensuring homogeneous current spreading and luminance distribution.
Innovation Solution
The design incorporates a first and second current spreading structure, with the second current spreading structure arranged closer to the semiconductor layer and potentially in direct contact, facilitated by an insulating intermediate layer that may be a dielectric mirror layer, and connected via transparent conductive layers to ensure efficient electrical contact and reduced absorption of electromagnetic radiation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact structures are used to electrically contact semiconductor layers, then electrical contact is achieved, but homogeneous current spreading and luminance distribution are impaired
Solution Approach 1:
A transparent conductive layer is introduced as an intermediary between the contact structure and the semiconductor layer. This intermediate layer enables electrical contact while maintaining homogeneous current spreading and luminance distribution, as it is transparent to electromagnetic radiation and does not absorb light like traditional metal contact structures would.
Solution Approach 2:
The patent changes the material parameter of the contact structure from opaque metal to transparent conductive material. This parameter change allows the contact structure to simultaneously provide electrical contact and maintain optical transparency, thereby achieving both reliable electrical connection and homogeneous current spreading without light absorption.
2Reliability
If current spreading structures are placed close to semiconductor layers for efficient contact, then electrical contact is improved, but absorption of electromagnetic radiation increases
Solution Approach 1:
The contact structure material is changed from opaque to transparent, changing its optical parameter. This allows the structure to be positioned close to the semiconductor layer for efficient electrical contact while not absorbing electromagnetic radiation, thus eliminating the energy loss that would occur with traditional opaque contact structures.
Solution Approach 2:
The patent uses composite material structures combining transparent conductive layers with contact structures. This composite approach enables the contact structure to achieve both electrical conductivity and optical transparency, allowing close placement to semiconductor layers without radiation absorption penalties.
3Reliability
If opaque contact structures are used to ensure electrical contact, then contact reliability is achieved, but electromagnetic radiation is absorbed
Solution Approach 1:
The optical parameter of the contact structure is changed from opaque to transparent. This parameter change eliminates the harmful effect of radiation absorption while maintaining the essential function of electrical contact, as the transparent conductive material allows electromagnetic radiation to pass through without absorption.
Solution Approach 2:
The patent converts the traditionally harmful effect of opaque contact structures (radiation absorption) into a beneficial situation by using transparent materials. What was previously a harmful factor (light absorption reducing device efficiency) becomes eliminated, allowing the contact structure to serve its electrical function without the harmful optical side effect.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances homogeneous current spreading and luminance distribution, increasing the active semiconductor area for radiation emission while minimizing radiation absorption by the contact structures.
Implementation Method 1
The insulating intermediate layer may be interrupted in sections. As a result, a direct physical contact may be made possible in sections between the second current spreading structure and the second semiconductor layer.
Implementation Method 2
the insulating intermediate layer may be designed as a dielectric mirror layer
Implementation Method 3
When electrons and holes recombine with one another in the area of the pn junction, for example, because a corresponding voltage is applied, electromagnetic radiation is generated.
Data Source
AI summary
An optoelectronic semiconductor device may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and an insulating intermediate layer. The second semiconductor layer may be arranged over a substrate. The first semiconductor layer may be arranged between the second semiconductor layer and the substrate. The first current spreading structure may be electrically connected to the first semiconductor layer, and the second current spreading structure electrically may be connected to the second semiconductor layer. The insulating intermediate layer may include a dielectric mirror and may be arranged between the second current spreading structure and the second semiconductor layer. The current spreading structures may overlap one another in a plane perpendicular to a main surface of the substrate. The first current spreading structure may be arranged at a larger distance from the first semiconductor layer than the second current spreading structure.