Heterostructured Optoelectronic Device with 2D Material and Oxide Semiconductor
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Solution Overview
Problem
Optoelectronic devices face challenges in achieving wide spectral responsivity and high photoresponsivity, particularly in miniaturizing the light-receiving area to enhance integration while maintaining effective light detection across a broad spectral range.
Innovation Solution
A heterostructure comprising an oxide semiconductor layer and a semiconducting 2D material layer, such as MoS2 or WS2, is used, with the semiconducting 2D material layer absorbing visible light and the oxide semiconductor layer, like IGZO, absorbing ultraviolet light, to form a stack structure that includes electrodes for phototransistors or photodetectors, allowing for increased photoresponsivity and spectral range detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the size of a unit optoelectronic device is decreased to improve integration, then the degree of integration is improved, but the area of the light-receiving unit decreases leading to reduced photoresponsivity
Solution Approach 1:
The patent employs a composite heterostructure combining oxide semiconductor layer and semiconducting 2D material layer. Each material absorbs different spectral regions (oxide for UV, 2D material for visible), creating a synergistic effect that maintains high photoresponsivity across wide spectral range even in miniaturized devices.
Solution Approach 2:
The light-absorbing function is segmented between two distinct material layers with complementary spectral responses. The oxide semiconductor layer handles UV detection while the semiconducting 2D material layer handles visible light detection, allowing the miniaturized device to maintain comprehensive spectral coverage.
2Device complexity
If a single material layer is used for light absorption, then the device structure is simple, but the spectral range is limited
Solution Approach 1:
The patent uses a composite heterostructure where oxide semiconductor and semiconducting 2D material are combined. These materials have complementary band gaps that enable absorption across both UV and visible spectral regions, achieving wide spectral responsivity without excessive structural complexity.
Solution Approach 2:
The heterostructured light-absorbing layer performs multiple functions simultaneously: it detects both UV and visible light, generates carriers in both spectral regions, and maintains a relatively simple overall device structure. This multi-functionality is achieved through the complementary optical properties of the combined materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The heterostructured optoelectronic device achieves enhanced photoresponsivity and wide spectral responsivity, enabling efficient light detection from visible to ultraviolet regions, thereby improving the integration and miniaturization of optoelectronic devices.
Implementation Method 1
The semiconducting 2D material layer may absorb light in a visible light region
Implementation Method 2
the oxide semiconductor layer may absorb light in an ultraviolet (UV) region
Implementation Method 3
Optoelectronic devices convert an optical signal into an electrical signal
Data Source
AI summary
An optoelectronic device is disclosed. The disclosed optoelectronic device includes an oxide semiconductor layer and a semiconducting two-dimensional (2D) material layer forming a stack structure with the oxide semiconductor layer.