Flip-Flop Gate Electrode Cross-Connection for Semiconductor Area Reduction
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high integration density and reduced cell height while maintaining performance, particularly in flip-flop circuits, due to the complexity and width requirements of conductive lines for electric connections.
Innovation Solution
The semiconductor device employs a cross-coupled structure connecting gate electrodes in a crossing manner, using a single conductive line to connect multiple gate electrodes, reducing the number of conductive lines needed and eliminating the need for additional interconnection layers, thereby increasing integration density without increasing cell height.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple separate conductive lines are used to connect gate electrodes in flip-flop circuits, then electrical connection reliability is improved, but device area increases and integration density decreases
Solution Approach 1:
The patent combines multiple conductive lines into a single shared conductive line that serves multiple gate electrodes simultaneously. The first conductive line connects both the first gate electrode and the fourth gate electrode, while the second conductive line connects both the second gate electrode and the third gate electrode, reducing the total number of conductive lines and device area while maintaining all necessary electrical connections
Solution Approach 2:
The conductive lines are designed to perform multiple functions by connecting multiple gate electrodes. A single conductive line serves as the connection path for multiple gates, making the conductive structure universal rather than dedicated to a single connection, thereby reducing overall device area while preserving connection reliability
2Adaptability or versatility
If additional interconnection layers are added to connect gate electrodes, then connection flexibility is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent merges the connection functions into existing conductive line structures rather than adding separate interconnection layers. The first and second conductive lines are integrated into the existing circuit layout to connect multiple gate electrodes, avoiding the need for additional interconnection layers and reducing manufacturing complexity
Solution Approach 2:
The existing conductive line structure is designed to serve multiple connection purposes simultaneously. The same conductive line that connects to source/drain regions also connects to multiple gate electrodes, providing connection flexibility without requiring additional dedicated interconnection layers
3Area of stationary object
If cell height is reduced to increase integration density, then device area decreases, but manufacturing precision requirements increase
Solution Approach 1:
The patent addresses the area reduction challenge by optimizing the horizontal layout arrangement rather than simply reducing cell height. The conductive lines are arranged to cross between PMOS and NMOS regions in a planar configuration, allowing area reduction through dimensional optimization while avoiding excessive precision requirements that would result from extreme height reduction
Data Source
AI summary
A semiconductor device includes a substrate including PMOSFET and NMOSFET regions. First and second gate electrodes are provided on the PMOSFET region, and third and fourth gate electrodes are provided on the NMOSFET region. A connection contact is provided to connect the second gate electrode with the third gate electrode, and a connection line is provided on the connection contact to cross the connection contact and connect the first gate electrode to the fourth gate electrode.