Floating Body Select Devices for Resistive Memory Integration
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Solution Overview
Problem
Existing integrated circuits with resistivity changing memory cells face challenges in efficiently switching between non-conductive and conductive modes, particularly in managing parasitic effects and maintaining small cell sizes for high memory density and cost-effectiveness.
Innovation Solution
The integration of floating body select devices, which switch from a non-conductive to a conductive mode by applying a voltage drop, allowing for reading and writing of memory states without low ohmic connections, and using techniques like punch-through or snap-back effects to manage parasitic effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional select devices with low ohmic connections are used, then reliable switching between non-conductive and conductive modes is achieved, but device complexity and cell size increase
Solution Approach 1:
The invention extracts and eliminates the low ohmic connection from the select device structure. By using a floating body design where the body is not directly connected to a low ohmic potential, the patent removes the harmful element (low ohmic connection) that previously caused parasitic effects and increased device complexity, while maintaining switching reliability through the floating body's inherent electrical characteristics
Solution Approach 2:
The invention changes the electrical parameter state of the select device by transitioning from a grounded body configuration to a floating body configuration. This parameter change allows the device to operate without low ohmic connections, reducing parasitic effects and simplifying the cell structure while maintaining the ability to switch between conductive and non-conductive modes through voltage control
2Ease of manufacture
If larger cell sizes are used to accommodate conventional select devices, then manufacturing and operation become easier, but memory density decreases
Solution Approach 1:
By removing the low ohmic connection requirement from the select device, the patent reduces the space needed for routing and connection structures. This extraction allows for smaller cell footprints while maintaining manufacturability, directly increasing the number of cells that can be packed into a given area
Solution Approach 2:
The floating body select device enables a transition to more compact dimensional arrangements. By eliminating the need for extended low ohmic connections, the cell structure can be optimized in the planar dimension, allowing higher cell density without compromising manufacturing ease
3Stability of the object's composition
If periodic refresh operations are implemented to manage parasitic effects, then memory state stability is maintained, but productivity and speed decrease
Solution Approach 1:
The invention converts the previously harmful parasitic effects into a beneficial feature. By using a floating body design, the parasitic capacitance that would normally cause instability is instead utilized to enhance the snap-back effect, improving the device's ability to maintain stable memory states without requiring periodic refresh operations
Solution Approach 2:
The floating body select device is self-sufficient in maintaining its memory state through the inherent electrical characteristics of the floating body structure. The device automatically maintains stability through its own electrical properties without requiring external refresh operations, thereby improving productivity and operation speed
4Quantity of substance
If floating body select devices are used to reduce cell size, then memory density increases, but parasitic effects become more significant
Solution Approach 1:
The patent converts the harmful parasitic capacitance of the floating body into a beneficial mechanism. The parasitic capacitance that would normally cause instability is instead exploited to enhance the snap-back effect, improving switching characteristics and enabling smaller cell sizes without suffering from the traditional drawbacks of floating body devices
Solution Approach 2:
The invention changes the electrical parameter relationships within the floating body device to transform parasitic effects into useful functionality. By carefully controlling voltage parameters and utilizing the floating body's electrical characteristics, the parasitic capacitance becomes an asset that enhances device performance rather than a liability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient memory state operations with reduced parasitic effects and smaller cell sizes, enhancing memory density and cost competitiveness by eliminating the need for low ohmic connections and periodic refreshes.
Implementation Method 1
using techniques like punch-through or snap-back effects to manage parasitic effects
Implementation Method 2
using techniques like punch-through or snap-back effects to manage parasitic effects
Data Source
AI summary
According to one embodiment of the present invention, an integrated circuit is provided including a plurality of resistivity changing memory elements and a plurality of memory element select devices, wherein the select devices are floating body select devices.