Floating Gate Memory Radiation Tolerance via Charge Accumulation
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Solution Overview
Problem
Floating gate memory technologies are susceptible to radiation damage, leading to data corruption and errors due to ionizing radiation, which hampers their use in environments like outer space and near nuclear reactors.
Innovation Solution
A method to improve radiation tolerance by writing additional charge to the floating gate transistors multiple times, increasing the charge accumulation, and determining a radiation-resistant state through irradiation, ensuring the data remains above a predetermined corruption threshold.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If floating gate devices are used in radiation environments, then data storage capability is provided, but data corruption occurs due to ionizing radiation
Solution Approach 1:
The patent applies preliminary action by performing multiple write operations to the floating gate device before radiation exposure. This pre-accumulation of charge in the floating gate creates a reserve that compensates for charge loss during radiation exposure, thereby preventing data corruption. The method proactively prepares the device to withstand anticipated radiation damage.
Solution Approach 2:
The patent changes the charge parameter by accumulating excessive charge through multiple write operations. Instead of storing the minimum required charge, the device accumulates a higher charge level that provides a margin of safety against radiation-induced charge loss. This parameter change transforms the device's charge state to be more resilient to radiation effects.
2Reliability
If multiple writes are performed to accumulate charge, then radiation tolerance is improved, but write operations and time are increased
Solution Approach 1:
The patent applies partial or excessive action by performing more write operations than the minimum single write required for normal operation. Multiple writes accumulate excessive charge beyond what is strictly necessary for data storage, creating a charge reserve that enhances radiation tolerance. This excessive action trades additional write time for improved reliability in radiation environments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly reduces data corruption in floating gate devices by increasing their radiation tolerance, allowing them to function reliably in high-radiation environments by accumulating sufficient charge through multiple writes, thus maintaining data integrity.
Implementation Method 1
writing additional charge to the floating gate transistors multiple times, increasing the charge accumulation
Implementation Method 2
determining a radiation-resistant state of the floating gate transistor by irradiating the floating gate transistor at a predetermined radiation threshold
Data Source
AI summary
A method of improving radiation tolerance of floating gate memories is provided herein. Floating gate memories can include a floating gate transistor or a block of floating gate transistors. A floating gate transistor can include a semiconductor region, a source region, a drain region, a floating gate region, a tunnel oxide region, an oxide-nitride-oxide region, and a control gate region. A floating gate transistor or block of floating gate transistors can be written to multiple times in order to accumulate charge on one or more floating gate regions in accordance with an embodiment of the invention. When exposed to radiation, a floating gate region can retain its charge above a certain voltage threshold. A block of floating gate transistors can communicate with an external device where the external device can read a state of the block of floating gate transistors in accordance with an embodiment of the invention.