Fluorinated CMP Pad With Multimodal Grooves for STI Planarization
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Solution Overview
Problem
Existing chemical mechanical polishing (CMP) pads face challenges in achieving high removal rates with low defect occurrence and good planarization at low downforce pressures, particularly in shallow trench isolation (STI) processes.
Innovation Solution
A polishing pad with a polyurea layer featuring a groove pattern comprising large first grooves and interspersed smaller second grooves, made from a fluorinated aliphatic species and diisocyanate-containing segments, providing a specific gravity of at least 1.05 g/cm³, enhances material removal at low downforces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If porosity of the polishing layer is increased to improve removal rate, then removal rate is improved, but planarity is detrimentally affected
Solution Approach 1:
The patent applies local quality by creating a non-uniform groove pattern where different regions of the polishing pad have different groove characteristics. Specifically, there are first grooves with a first cross-sectional area and second grooves with a second cross-sectional area that is less than 50% of the first groove cross-sectional area. This local variation in groove geometry allows different areas of the pad to perform different functions - some areas provide higher removal rate while others maintain planarity, thus resolving the contradiction between these two requirements.
2Reliability
If downforce pressure is reduced to low defect occurrence, then defect occurrence is reduced, but removal rate decreases
Solution Approach 1:
The patent applies parameter changes by modifying the physical and chemical parameters of the polishing pad material. Specifically, it uses a fluorinated polyurea polymer with controlled molecular weight and composition, and creates a groove pattern with specific geometric parameters (cross-sectional area ratios, groove depths, groove spacings). These parameter changes enable the pad to achieve high removal rates even at low downforce pressures below 30 kPa, while maintaining low defect occurrence and good planarity.
3Productivity
If downforce pressure is increased to improve removal rate, then removal rate is improved, but defect occurrence increases
Solution Approach 1:
The patent applies mechanics substitution by replacing reliance on high mechanical downforce with a chemically enhanced mechanical system. The fluorinated polyurea polymer material provides chemical mechanical polishing action through its specific molecular structure and interaction with the slurry, enabling effective material removal at low mechanical pressures. This substitutes the need for high downforce (which causes defects) with a chemically active material that removes material effectively through chemical-mechanical interaction rather than pure mechanical compression.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The pad achieves significantly higher removal rates, up to 75% improvement, while maintaining low defect occurrence and good planarization, even at downforces below 30 kPa.
Implementation Method 1
a polyurea having a soft phase and a hard phase, the soft phase being a copolymer of aliphatic fluorine-free species and a fluorinated aliphatic species, and hard phase being formed from diisocyanate containing segments and an amine curative agent
Implementation Method 2
The shear and the slurry particles trapped at the pad/substrate junction abrade the substrate (e.g., wafer) surface, leading to removal of material from the substrate surface
Implementation Method 3
Chemical Mechanical Planarization (CMP) is a variation of a polishing process that is widely used to flatten, or planarize, the layers of construction of an integrated circuit or similar structure
Data Source
AI summary
A polishing pad suitable for chemical mechanical polishing comprising: a polishing layer having a top surface having a groove pattern, the groove pattern comprises a plurality of first grooves having a first groove cross-section, the plurality of first grooves defining a plurality of regions between adjacent first grooves; and, in a portion of the plurality of region between adjacent first grooves, a plurality of second grooves having a second groove cross-section, wherein the second groove cross-section is less than 50 percent of the first groove cross-section, wherein the polishing layer is further characterized by having a specific gravity of at least 1.05 grams per cubic centimeter.


