Fluorinated Photoresist for OLED Patterning

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Solution Overview

Problem

Current methods for manufacturing organic light emitting diode displays using photolithography technology face challenges such as damage to organic light emitting materials due to interactions with photoresists and solvents, leading to low production yields and high costs in mass production.

Innovation Solution

A highly fluorinated photoresist copolymer, formed from 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10-Heptadecafluorodecyl Methacrylate and 6-(anthracene-9-yl)hexyl methacrylate, which undergoes a photodimerization reaction upon exposure to UV light, minimizing interaction with organic materials and allowing for high-resolution patterning without forming strong acids during development.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional photoresist and solvent are used in photolithography manufacturing, then patterning can be achieved, but organic light emitting materials are damaged due to interactions with photoresist and solvent

Engineering Contradiction:
Improvepatterning resolutionVSAvoidmaterial damage
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent changes the chemical composition parameters of the photoresist by using highly fluorinated compounds (with fluorine content of 60-80 wt%) instead of conventional photoresist. This parameter change modifies the chemical properties to reduce harmful interactions with organic light emitting materials while maintaining patterning capability through photodimerization chemistry

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs a disposable photoresist system where the highly fluorinated photoresist is applied, patterned, and then completely removed after serving its purpose. The photoresist is designed to be used once and discarded, eliminating residual harmful effects on the organic materials while achieving the required patterning precision

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

2Productivity

If conventional photolithography process is used, then manufacturing can proceed, but production yields are low due to material damage

Engineering Contradiction:
Improveproduction yieldVSAvoidmaterial integrity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent converts the potential harm of photoresist-solvent interactions into a benefit by using highly fluorinated compounds that exhibit minimal interaction with organic materials. The fluorinated photoresist system transforms what was traditionally a harmful process into a protective one, enabling higher production yields while maintaining material integrity through chemically inert fluorinated solvents and photoresist

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

3Manufacturing precision

If conventional photoresist is used, then patterning can be performed, but strong acids are formed during development causing additional damage

Engineering Contradiction:
Improvepatterning capabilityVSAvoidstrong acid formation
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent changes the chemical reaction mechanism by employing photodimerization chemistry instead of conventional photoacid generator mechanisms. This parameter change in the chemical process eliminates the formation of strong acids during development, as the fluorinated photoresist cures through dimerization reactions that do not produce acidic byproducts, thereby protecting organic materials from acid-related damage

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of the highly fluorinated photoresist reduces material damage and simplifies the manufacturing process, enabling high-resolution organic light emitting diode displays on large area substrates with improved production yields and reduced costs.

Implementation Method 1

the photoresist including the copolymer; patterning the photoresist into a patterned photoresist by exposing the photoresist to an ultraviolet light through a mask

Methodology Applied
Scientific EffectPhotodimerization: Photopolymerisation

Data Source

PatentUS9666802B2Photoresist employing photodimerization chemistry and method for manufacturing organic light emitting diode display using the same
Publication Date: 2017.05.30 LG DISPLAY CO LTD
  • US9666802B2 patent drawing
  • US9666802B2 patent drawing
  • US9666802B2 patent drawing

AI summary

A highly fluorinated photoresist employing a photodimerization chemistry and a method for manufacturing an organic light emitting diode display using the same. The photoresist includes a copolymer that is made from two different monomers. When the copolymer is used as a photoresist, the photoresist has the characteristic that it becomes insoluble when exposed to an ultraviolet light having a wavelength of 365 nm.