Fluorine Ion Implantation Arc Chamber Using Non-Tungsten Materials
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Solution Overview
Problem
Conventional fluorine ion implantation processes are limited by the type of fluorine ions implanted and specificity of implantation depth, and the use of fluorine-containing feed gases leads to a halogen cycle that negatively impacts ion source performance and system life.
Innovation Solution
The use of non-tungsten materials in the arc chamber, such as graphite-containing materials, reduces the formation of tungsten fluoride and allows for improved fluorine ion implantation by incorporating hydrogen and/or hydride gases to enhance beam current and source lifetime.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If fluorine-containing feed gases are used for fluorine ion implantation, then fluorine implantation is achieved, but tungsten fluoride formation occurs which negatively impacts ion source performance and system life
Solution Approach 1:
The invention extracts and removes tungsten from the arc chamber environment by using a tungsten-free arc chamber design. This eliminates the source of tungsten fluoride formation by preventing tungsten from being present in the fluorine-containing atmosphere, thereby resolving the harmful effect while maintaining fluorine implantation capability
Solution Approach 2:
The invention introduces a fluorocarbon-containing compound as an intermediary substance that serves as a fluorine source without requiring tungsten presence. This intermediary compound decomposes to provide fluorine ions for implantation while carbon-based materials resist forming harmful volatile compounds under implantation conditions, thus eliminating tungsten fluoride formation
2Manufacturing precision
If conventional fluorine implant processes are used, then fluorine ion implantation is achieved, but implantation depth control and ion specificity are limited
Solution Approach 1:
The invention changes the chemical parameters of the fluorine source by using fluorocarbon-containing compounds with varying carbon-to-fluorine ratios and bond strengths. This allows control over the type of fluorine ions generated and their implantation characteristics, enabling precise depth control and ion specificity that conventional fluorine sources cannot achieve
Solution Approach 2:
The invention uses fluorocarbon-containing compounds that combine carbon and fluorine in specific ratios and configurations. This composite molecular structure allows tuning of the material properties to control fluorine ion generation, providing versatility in ion type selection and implantation depth control while maintaining process efficiency
3Productivity
If fluorine-containing gases are used in the arc chamber, then fluorine ion beam is generated, but source life and tool productivity are reduced due to halogen cycle
Solution Approach 1:
The invention converts the potentially harmful interaction between fluorine and tungsten into a beneficial outcome by replacing tungsten with fluorocarbon-containing materials. The carbon-based materials form stable compounds under implantation conditions, and any carbon deposition can be managed through standard cleaning procedures, thus extending source life while maintaining productivity
Solution Approach 2:
The invention employs fluorocarbon-containing compounds that can be easily replenished and replaced. These compounds serve as consumable fluorine sources that can be quickly exchanged during maintenance, minimizing downtime and maintaining high tool productivity while the tungsten-free arc chamber structure provides long-term durability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach minimizes unwanted tungsten or tungsten fluoride coating, extending ion source life and improving system performance by optimizing fluorine ion implantation depth and beam current.
Implementation Method 1
a fluorine compound is capable of generating at least one fluorine ion species when ionized
Implementation Method 2
implanting fluorine ion species into a substrate in an ion implantation process
Data Source
AI summary
A system and method for fluorine ion implantation is described, which includes a fluorine gas source used to generate a fluorine ion species for implantation to a subject, and an arc chamber that includes one or more non-tungsten materials (graphite, carbide, fluoride, nitride, oxide, ceramic). The system minimizes formation of tungsten fluoride during system operation, thereby extending source life and promoting improved system performance. Further, the system can include a hydrogen and/or hydride gas source, and these gases can be used along with the fluorine gas to improve source lifetime and/or beam current.