Fly-Bitline SRAM Readout With Single-Ended Sensing

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Solution Overview

Problem

Traditional single-port SRAM bit-cells require complex pre-charging timing control and differential sense amplifiers with high gate count, leading to large chip area and high power consumption.

Innovation Solution

Implementing a memory design with fly-bitlines that utilize single-ended sensing and a single-ended sense amplifier circuit, which includes a logic gate and an output latch, eliminating the need for differential sensing and reducing chip area and power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If differential sense amplifier is used for reading SRAM bit-cell, then measurement precision is improved, but device complexity increases and power consumption increases

Engineering Contradiction:
Improvereading precisionVSAvoidsense amplifier complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent extracts the differential sensing function and replaces it with single-ended sensing. Instead of using a complex differential sense amplifier that requires two bitlines (BL and BLB), the invention uses a simple single-ended sense amplifier that only requires one bitline (BL), thereby reducing device complexity while maintaining reading capability through the fly-bitline mechanism

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The fly-bitline (BLF) serves multiple functions: it acts as a virtual extension of the physical bitline to reduce RC delay, functions as a charging path during read operations, and enables single-ended sensing to work effectively. This multi-functional design allows the system to achieve differential-like performance with single-ended hardware

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Measurement precision

If differential sense amplifier is used for reading SRAM bit-cell, then measurement precision is improved, but power consumption increases

Engineering Contradiction:
Improvereading precisionVSAvoidpower consumption
Core Design Contradiction:
Measurement precisionVSUse of energy by moving object

Solution Approach 1:

The patent removes the power-consuming differential sense amplifier and replaces it with a low-power single-ended sense amplifier. The fly-bitline mechanism enables this simplification by providing virtual bitline extension that maintains signal integrity without requiring the complex differential amplification circuitry that consumes significant power

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The invention uses simple, low-cost single-ended sensing circuitry instead of expensive differential sense amplifiers. The fly-bitline acts as a temporary virtual extension that exists only during the read operation, enabling simple circuitry to achieve the performance of complex circuitry at lower power cost

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Ease of operation

If pre-charging timing control and pass-gate timing control are implemented, then reading operation is improved, but device complexity increases

Engineering Contradiction:
Improvereading operationVSAvoidtiming control complexity
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The patent removes the complex pre-charging timing control and pass-gate timing control mechanisms from traditional differential sensing. The fly-bitline-based single-ended sensing inherently simplifies the read operation by using the fly-bitline as a natural charging path, eliminating the need for complex timing control circuits while maintaining proper read operation sequencing

Inventive Principle:
Principle #2Taking out (Extraction)

Data Source

PatentEP4362017B1Memory with fly-bitlines that work with single-ended sensing and associated memory access method
Publication Date: 2026.04.01 MEDIATEK INC
  • EP4362017B1 patent drawingFigure 1
  • EP4362017B1 patent drawingFigure 2
  • EP4362017B1 patent drawingFigure 3

AI summary

A memory includes a memory array and a single-ended sense amplifier circuit. The memory array includes wordlines, bitlines, and memory cells. The bitlines include a first bitline, routed on a first metal layer but not a second metal layer, and a second bitline, routed on the first metal layer and the second metal layer. Each of the memory cells is coupled to one of the wordlines. The memory cells include a first group of memory cells, coupled to the first bitline, and a second group of memory cells, coupled to the second bitline, where the first group of memory cells and the second group of memory cells are located at a same column. The single-ended sense amplifier circuit performs a read operation upon a target memory cell through single-ended sensing when a selected wordline is enabled.