FSI Image Sensor Metal Shield Structure for Stray Light Blocking
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Solution Overview
Problem
Existing image sensor device structures face inefficiencies in global shutter mode due to unwanted stray light exposure, leading to crosstalk and reduced quantum efficiency, particularly in the storage region and storage gate structures.
Innovation Solution
A front side illuminated (FSI) image sensor device structure is developed with a metal shield structure that covers the top surface and sidewall surfaces of the storage gate structure, formed using a conductive material with optimal thickness and etching processes to prevent light entry, and is electrically connected to a conductive structure through a via to ensure effective shielding and charge transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal shield structure is added to cover the storage gate structure, then light blocking performance is improved and quantum efficiency is enhanced, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The shield structure is divided into multiple segments including a first shield structure covering the pixel region and a second shield structure covering the storage region. This segmentation allows each shield to be optimized independently for its specific function while reducing overall manufacturing complexity compared to a single monolithic shield.
Solution Approach 2:
Different shield structures are applied to different regions of the device based on local requirements. The pixel region receives a first shield structure with specific properties, while the storage region receives a second shield structure with different properties, optimizing light blocking performance for each region's specific function.
2Reliability
If the metal shield structure is formed with optimal thickness using etching processes, then light blocking performance is improved, but manufacturing precision requirements increase
Solution Approach 1:
The shield structures extend beyond the minimum required coverage areas to ensure complete light blocking. The first shield structure covers not only the pixel region but also portions of the storage region, and the second shield structure provides additional coverage, ensuring that no stray light can reach sensitive areas even with manufacturing tolerances.
Solution Approach 2:
The thickness and material composition of the shield structures are optimized to achieve effective light blocking at practical manufacturing tolerances. By adjusting these parameters, the design achieves sufficient light blocking performance without requiring extreme manufacturing precision.
3Reliability
If the metal shield structure covers both top surface and sidewall surfaces of the storage gate structure, then stray light prevention is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The shield structures are designed to extend in multiple dimensions - both vertically (covering top surfaces) and laterally (covering sidewall surfaces). This multi-dimensional coverage ensures that stray light from any direction is blocked, while the segmented design maintains manufacturability by allowing each dimensional extension to be formed using standard semiconductor fabrication processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The metal shield structure enhances light blocking, improves quantum efficiency, and increases global shutter efficiency by preventing stray light from entering the storage region and storage gate, thereby reducing crosstalk and enhancing overall image sensor performance.
Implementation Method 1
The metal shield structure covers a top surface and sidewall surfaces of the storage gate structure to prevent unwanted stray light from entering the storage gate structure and/or the storage region
Implementation Method 2
The electrical signal is used to display a corresponding image on a monitor or provide information about the optical image
Data Source
AI summary
An FSI image sensor device structure is provided. The FSI image sensor device structure includes a pixel region formed in a substrate and a storage region formed in the substrate and adjacent to the pixel region. The FSI image sensor device structure further includes a first gate structure formed over the storage region and a metal shield structure formed over the first gate structure. The FSI image sensor device structure further includes a conductive structure formed adjacent to the first gate structure. In addition, the conductive structure is electrically connected to the metal shield structure through a via.


