Solid-State Devices TRIZ Cases

Laser ablation through a protective layer patterns OLED structures while removing debris to prevent unwanted electrical shortcuts.

Three-mask fabrication covers active layers with gate electrodes to eliminate semiconductor protrusions, reducing wavy noise and boosting LCD aperture ratios.

Protective pattern prevents light leakage and extends lifespan by blocking current leakage during solution processing.

A charge generation layer doped with a p-type dopant reduces driving voltage in organic luminescence displays.

Parallel control and select interconnections form a vertical capacitor to boost select signal voltage without expanding the switching device layout area.

Dynamic voltage adjustment on a dedicated protection region limits stray electron interference, improving image accuracy without increasing device complexity.

A wave-guide tube with an optical barrier prevents crosstalk by ensuring total internal reflection of incident light.

Circular arc color filter units maintain uniform film thickness, eliminating color shift caused by varying optical paths at different viewing angles.

Silicon cap shields germanium from processing chemicals, reducing contact resistance and boosting responsivity.

A semiconductor unit incorporates a discharge groove communicating with an alignment groove to allow trapped substances to escape.

A strained silicon photo detector enhances electron mobility and responsivity within standard CMOS processes.

A semiconductor memory device stores main and parity data across multiple sub-array blocks to correct multiple bit errors.

An intermediary buffer layer prevents contamination from degrading light emission properties during sequential deposition processes.

A buffer layer between electrodes and memory layers controls ionic species movement to stabilize resistance states.

Vertical trench structures compress planar footprint while concentrating resistance and capacitance values within shallow isolation regions.

Resistive heating reduces deposition on the mask while support structures prevent pinch-off at high aspect ratio openings.

A polycyclic compound in the emission layer generates delayed fluorescence to boost luminous efficiency.

Integrating a capacitor into the memory string eliminates external bus bottlenecks, enabling high-speed data transfer and concurrent multi-page programming.

A light scattering layer between the pixel electrode and organic layer redirects trapped photons toward the viewer.

A dedicated etching stopping layer prevents base insulating film damage and light leakage when cutting short-circuit wiring lines.

Shielded local and global digit line configurations lower parasitic capacitance, improving read speed and reducing sensing time in 3D NAND devices.

Partial inter poly dielectric films on trapezoidal floating gates suppress leakage and short channel effects while maintaining capacitance ratios.

High-temperature annealing resets surface defects in delaminated wafers, enabling multiple regeneration cycles without inducing bonding failures.

Master semiconductor die segments power supply voltages to maintain voltage stability and prevent operation errors during high-speed data transfers.

Trimmed sacrificial layers oxidize into non-uniform charge blocking structures that compensate for angled channel holes in stacked memory arrays.

Segmenting photogenerating layers on opposite sides of a substrate avoids lattice constant conflicts while expanding the light absorption range.

A plasmonic enhancement layer couples exciton energy to surface plasmon polaritons, transferring it via an emissive outcoupling layer into free space as light.

Segmenting the gate electrode work function reduces gate-induced drain leakage while maintaining threshold voltage, improving semiconductor device performance.

Alternating silicon and germanium layers in a CMOS image sensor superlattice boost infrared light absorption while reducing pixel crosstalk.

A graphene-based light-refracting structure with lens-like bubbles redirects internal photons to boost optical output.

Merging the second line and blocking layer into a single patterning step reduces processing costs while maintaining high-speed operation.

Heating bumps to bond LEDs sequentially onto array substrates, resolving uniformity issues from simultaneous placement.

Segmented resin grooves restrict laser ablation zones, lowering costs and preserving film integrity against moisture ingress.

Capillary frame structures guide coating liquids into pixel regions, eliminating high-precision evaporation masks and reducing manufacturing complexity.

A top-emitting white OLED device uses a gradually-varied organic layer cavity length to enhance light intensity across red to blue wavelengths.

A dynamic bias voltage system adjusts buffer word line voltages based on erase loop counts to maintain stable threshold levels across memory cells.

A semiconductor light emitting device uses segmented reflection surfaces to direct lateral and oblique light along the optical axis.

Fishbone insulating structure segments transparent conductive layers to eliminate dark strips and improve light transmittance efficiency.

Uneven outer surfaces on vertical semiconductor layers reduce internal reflections, boosting light extraction efficiency.

Epoxy-group solvents control surface tension to resolve deposition contradictions in inkjet printing.

An inorganic gap-filling layer topped by an organic resin eliminates Newton rings and discoloration caused by uneven CMP surfaces.

A combined phase shift and halftone mask forms active layer, source, and drain patterns in a single exposure step.

Segmented organic-inorganic protection layers shield light-emitting components, improving reliability without increasing device complexity.

A 1T2R RRAM cell uses a reactive top electrode to create oxygen vacancies and a second stack as a current limiter.

Lowering the source contact upper surface below the semiconductor layer creates a vertical buffer that prevents short-circuits during miniaturized fabrication.

A front side illuminated image sensor uses a metal shield structure to block stray light from the storage region.

A curable silicone composition with specific organopolysiloxanes and fillers forms a cured product with high light reflectance.

A display device uses a multi-layer sealing film to protect light-emitting elements from impurities.

An intermediate optical layer with a refractive index between the encapsulant and air reduces total internal reflection losses at the boundary surface.

Forming a junctionless fully-depleted layer on fin sidewalls increases gate width and reduces electric field interference between adjacent devices.

Gradient index microlenses reduce optical crosstalk in solid state imagers by directing off-axis light away from adjacent pixels.

Discrete backside openings replace continuous trenches in three-dimensional memory stacks to distribute mechanical stress omnidirectionally.

A 3D nonvolatile memory programming method applies distinct voltage levels to selected and unselected bit lines.

Gallium layers enable laser lift-off on non-transparent substrates by melting at the interface to separate the epitaxial structure.

Chemical etching replaces laser peeling to lower equipment costs while maintaining high yield on large substrates.

Electrochemical etching forms a porous region in silicon carbide wafers, eliminating mechanical sawing damage and coolant contamination during die separation.

Separating electrical and thermal conduction in a single substrate prevents cumulative heat gain from degrading signal integrity.

A semiconductor device with a highly flat channel region surface enhances drain current and transconductance for high-speed operation.

Source drain metal filling parts reduce via hole depth to smooth the substrate surface and eliminate black Mura defects.

Low refractive conductive layer increases outcoupling efficiency by reducing waveguide mode losses in organic light emitting devices.

Relocating power lines to a second substrate reduces resistance and voltage drops across large organic light emitting display panels.

Copper bump bonding connects micro LEDs to driving circuits without heat treatment, eliminating nickel particle invasion that causes short circuits.

Combining LEDs from different wavelength bins reduces dominant wavelength variation, achieving consistent white light output within two MacAdam ellipses.

A display panel substrate features a concave groove with an electrode layer extending to a convex section for direct electrical connection.

Uniform inorganic insulating layer prevents organic impurity contamination and afterimages in liquid crystal displays.

A laminated antireflection film uses a quaternary ammonium salt gradient in its hard coating layer to provide surface hardness and optical clarity.

Matching phenyl phosphine oxide derivatives in emission and electron transporting layers prevents alkaline metal ion diffusion into the emission layer.

Sidewall memristive structures shielded by protective spacers reduce OFF state currents and improve data retention in crossbar arrays.

A nanoparticle-polyorganosiloxane composite forms a dense three-dimensional network structure within the gate insulator layer of thin film transistors.

Bending non-display regions backward to stitch adjacent spliced display panels, eliminating visible seams and gaps that disrupt image continuity.

Composite doped gate stacks control threshold voltage in GaN transistors, resolving plasma treatment issues that compromise device reliability.

Laser induced thermal imaging creates low-resistance interconnections from metal nanoparticles, eliminating complex deposition processes that damage components.

Angled trench sections connect adjacent straight trenches in silicon carbide devices to prevent electric field localization at end portions.

Controlling the climbing angle of an organic layer below its breakable threshold prevents cracking in deposited films and extends OLED device service life.

A semiconductor memory pillar uses a protruding joint to strengthen electric fields and improve channel formation.

Core-shell particles induce surface plasmon resonance to enhance light emitting efficiency in LED packages.

A multi-layer housing structure protects portable X-ray detector components using a composite polymer and metal design.

Asymmetric dipole moment in organic molecular memory enables current rectification while maintaining high ON/OFF ratios for reliable signal reading.

A polysiloxane-based charge control layer chemically bonds to the charge transfer layer in light emitting diodes.

A memory device integrates a buried floating gate and metal control gate using a high-k inter-gate dielectric layer.

Integrating touch electrodes into a reflective metal layer eliminates separate substrates, reducing panel thickness while maintaining signal transmission.

Segmented channel hole etching prevents bottom deformation during sacrificial layer removal, maintaining uniform spacing across stacked layers.

A display panel reduces reflectivity by lowering light-emitting unit density in optical component regions and overlapping color resistors with light-transmitting areas.

Removing storage stacks and gate end-caps through self-aligned etching reduces SGLNVM unit cell area by 50% while maintaining device yield.

A state-variable layer combines diode selection with variable resistance storage in a single functional portion.

Extending the drain electrode over the channel region blocks incident light from degrading thin film transistor reliability without adding extra masking layers.

Raised source drain regions reduce extension resistance in extremely thin SOI devices, enabling high performance logic beyond 22 nm nodes.

A fuse layer on segmented electrodes disconnects excessive current to maintain uniform light emission across large organic light-emitting devices.

Selective removal of the gate dielectric layer on select transistors reduces operating voltage while maintaining reliability.

A non-aqueous synthesis method forms doped TiO2 nanoparticles that sinter into pinhole-free films at low temperatures.

Shared word lines and distinct bit lines in a zigzag layout reduce memory cell region area without increasing manufacturing complexity.

An irregularly-shaped gate electrode adjusts driving transistor threshold voltage to balance light-emitting brightness across display regions.

Increasing terrace film thickness widens the distance between adjacent electrode layers, preventing shorts and ensuring reliable contact hole formation.

A magnetic tunnel junction storage layer combines CoFeB with CoFe or NiFe sub-layers to reduce magnetostriction.

Concave patterns and dams on substrates confine adhesive flow, preventing pad electrode contact failures.

An adduct of PbI2 with N-methylpyrrolidone enhances perovskite crystal growth on solar cell electrodes.