3D Nanostructure Vertical LED Light Extraction
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Solution Overview
Problem
Semiconductor light-emitting devices with traditional structures face challenges in maximizing light extraction efficiency due to the inherent limitations of light transmission paths and surface reflections, leading to reduced brightness and efficiency.
Innovation Solution
A semiconductor light-emitting device with a three-dimensional (3D) nanostructure is developed, featuring vertical light-emitting structures, a transparent electrode layer, and an insulation-filling layer with a specific surface configuration to enhance light extraction efficiency by minimizing internal reflections and optimizing light transmission paths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a traditional planar structure is used, then the device structure is simple, but light extraction efficiency is low due to internal reflections and limited transmission paths
Solution Approach 1:
The patent transitions from a traditional planar (2D) LED structure to a three-dimensional (3D) nanostructure with vertical light-emitting structures protruding from the semiconductor layer. This dimensional change creates multiple light transmission paths and reduces internal reflections by directing light vertically outward, thereby improving light extraction efficiency without significantly complicating the manufacturing process.
Solution Approach 2:
The patent employs curved or rounded top surfaces on the vertical light-emitting structures rather than sharp edges. This curvature design helps to reduce total internal reflection at the interfaces and facilitates smoother light extraction paths, improving overall light extraction efficiency while maintaining structural integrity.
2Loss of energy
If vertical light-emitting structures are introduced to improve light extraction, then light extraction efficiency increases, but device structure becomes more complex
Solution Approach 1:
The patent divides the semiconductor layer into multiple discrete vertical light-emitting structures rather than using a continuous planar layer. Each vertical structure acts as an independent light-emitting unit, which simplifies the overall design by modularizing the light emission function while achieving improved light extraction efficiency through the collective effect of multiple structures.
3Loss of energy
If an uneven outer surface is created to reduce internal reflections, then light extraction efficiency improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent modifies the surface morphology parameters of the vertical light-emitting structures, specifically the curvature radius and height of the top surfaces. By optimizing these parameters, the design achieves effective reduction of internal reflections and improved light extraction efficiency while maintaining manufacturability through standard fabrication processes that can control these parameters within acceptable tolerances.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The 3D nanostructure design significantly improves light extraction efficiency by reducing internal reflections and increasing the amount of light emitted externally, enhancing the brightness and performance of semiconductor light-emitting devices.
Implementation Method 1
a selected one of the first conductive type semiconductor layer and the insulation-filling layer, which is disposed on a light transmission path through which light generated from the plurality of vertical type light-emitting structures is radiated externally, has an uneven outer surface opposite to an inner surface of the selected one
Data Source
AI summary
A semiconductor light-emitting device includes a first conductive type semiconductor layer having a main surface, a plurality of vertical type light-emitting structures protruding upward from the first conductive type semiconductor layer; a transparent electrode layer covering the plurality of vertical type light-emitting structures; and an insulation-filling layer disposed on the transparent electrode layer. The insulation-filling layer extends parallel to the first conductive type semiconductor layer so as to cover the plurality of vertical type light-emitting structures. A selected one of the first conductive type semiconductor layer and the insulation-filling layer, which is disposed on a light transmission path through which light generated from the plurality of vertical type light-emitting structures is radiated externally, has an uneven outer surface. The uneven outer surface is opposite to an inner surface of the selected one, and the inner surface faces the plurality of vertical type light-emitting structures.