Oxide Semiconductor Transistor Bridge Pattern and Blocking Layer Integration

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Solution Overview

Problem

Existing display apparatuses face challenges in achieving high-speed operation and reducing processing costs, particularly in the manufacturing of electronic devices with oxide semiconductor-based components.

Innovation Solution

The design incorporates a first and second transistor with oxide semiconductor patterns, a blocking layer, and a signal line with distinct layers, including a bridge pattern for electrical connection, allowing for high-speed operation and reduced processing costs through a specific manufacturing method involving etching and heat-treatment processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional manufacturing methods are used for display apparatuses, then processing costs are higher and manufacturing complexity increases, but high-speed operation capability is achieved

Engineering Contradiction:
Improvehigh-speed operationVSAvoidprocessing cost
Core Design Contradiction:
ProductivityVSEase of manufacture

Solution Approach 1:

The patent merges the formation of the second line and the blocking layer into a single simultaneous patterning process. Both structures are formed from the same conductive material layer in the same fabrication step, eliminating the need for separate deposition and patterning processes. This consolidation reduces manufacturing complexity and processing costs while maintaining the electrical connectivity and functional performance required for high-speed operation

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The conductive material layer serves multiple functions: it forms both the second line (signal transmission path) and the blocking layer (electrical isolation structure) simultaneously. This multi-functional approach reduces the number of material deposition steps and simplifies the manufacturing process, lowering processing costs while ensuring the display apparatus achieves high-speed operation through proper electrical connectivity

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Manufacturing precision

If signal lines are formed on the same layer as transistor components, then manufacturing precision is improved, but electrical interference and short circuit risks increase

Engineering Contradiction:
Improvealignment precisionVSAvoidelectrical isolation
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent segments the conductive material layer into functionally distinct regions: one region forms the second line for signal transmission, while another region forms the blocking layer for electrical isolation. This segmentation is achieved through selective patterning processes that define different geometries and positions for each function from the same material layer, ensuring both manufacturing precision and electrical reliability

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The conductive material layer exhibits local quality variations through differential patterning: in some regions it forms continuous conductive paths (second line) for signal transmission, while in other regions it forms isolated blocking structures for electrical isolation. This local differentiation of structure and function from a uniform material layer enables both precise alignment and reliable electrical isolation

Inventive Principle:
Principle #3Local quality

3Ease of manufacture

If multiple separate processes are used to form conductive structures, then manufacturing flexibility is improved, but processing time and cost increase

Engineering Contradiction:
Improvemanufacturing flexibilityVSAvoidprocessing time
Core Design Contradiction:
Ease of manufactureVSLoss of time

Solution Approach 1:

The patent performs preliminary action by forming both the second line and blocking layer structures in advance during the same fabrication step. The conductive material layer is deposited and patterned to create both functional elements simultaneously, eliminating the need for subsequent separate deposition and patterning processes. This preliminary formation of multiple structures reduces total processing time while maintaining manufacturing flexibility through controlled patterning

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

Multiple fabrication processes (deposition of conductive material, patterning for second line, patterning for blocking layer) are merged into a single integrated process step. The conductive material layer is formed and patterned simultaneously to create both the signal transmission line and the blocking structure, reducing the number of process steps and overall processing time while maintaining the flexibility to adjust designs

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables high-speed operation of electronic devices while reducing processing costs by stabilizing conductivity and simplifying the manufacturing process, particularly in forming conductive lines in narrow regions.

Implementation Method 1

a blocking layer disposed below the second transistor and including a conductive material

Methodology Applied
Scientific EffectCharge blocking: Electrical Resistance

Implementation Method 2

stabilizing conductivity and simplifying the manufacturing process

Methodology Applied
Scientific EffectHeat treatment: Heat Treatment

Data Source

PatentUS11574987B2Electronic apparatus and method of manufacturing the same
Publication Date: 2023.02.07 SAMSUNG DISPLAY CO LTD
  • US11574987B2 patent drawing
  • US11574987B2 patent drawing
  • US11574987B2 patent drawing

AI summary

An electronic apparatus includes a first transistor including a first oxide semiconductor pattern, a second transistor including a second oxide semiconductor pattern, a blocking layer including a conductive material, a signal line including a first line and a second line which are disposed on different layers, and a bridge pattern electrically connected to each of the first transistor, the first line of the signal line, and the second line of the signal line, wherein the first line of the signal line and the blocking layer are disposed on a same layer, and the second line of the signal line and the first oxide semiconductor pattern are disposed on a same layer.