Fuse-Resistor Layer Layout for Stable Miniaturized Semiconductor Circuits
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Solution Overview
Problem
Existing semiconductor devices require further stabilization of characteristics and miniaturization, particularly in mixed-element configurations where resistivity fluctuations under stress are a concern.
Innovation Solution
The semiconductor device incorporates a first metal film with specific portions and a second metal film made of silicon metal or nickel chromium, arranged in upper and lower layers of the wiring, with wider widths for certain portions to stabilize characteristics and facilitate miniaturization, and includes an electric fuse element using the same materials for fusing removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal resistor element layer is formed between the passivation film and the uppermost layer aluminum wiring, then high precision resistor element with less fluctuation of resistance value due to mold stress can be realized, but further stabilization of characteristics and miniaturization are still required
Solution Approach 1:
The patent changes the material parameter from conventional metal resistor elements to silicon metal or nickel chromium films, which have inherently lower stress sensitivity. This material parameter change enables both characteristic stabilization and device miniaturization by reducing the fluctuation of resistance value due to mold stress while allowing smaller device dimensions.
Solution Approach 2:
The patent employs composite material structures where silicon metal or nickel chromium films are integrated with the wiring layers. These composite materials provide both the precision resistor characteristics and the stress resistance needed for miniaturized devices, combining the benefits of material stability with structural efficiency.
2Reliability
If silicon metal or nickel chromium films are used for both resistor and fuse elements, then stable characteristics and miniaturization are achieved, but manufacturing precision requirements increase
Solution Approach 1:
The patent merges the formation of first and second metal films into a single simultaneous deposition process. By forming both silicon metal or nickel chromium films at the same time using one deposition step, the manufacturing precision requirements are reduced compared to forming each film separately, while still achieving the desired characteristic stability and miniaturization.
Solution Approach 2:
The silicon metal or nickel chromium films serve multiple functions: they act as both precision resistor elements and fuse elements. This multi-functionality reduces the number of different material layers needed, thereby simplifying the manufacturing process and reducing precision requirements while maintaining reliable characteristics.
Data Source
AI summary
An electric fuse element has a first portion, a second portion arranged on one end of the first portion, and a third portion arranged on the other end of the first portion. A resistor element is arranged separately from the electric fuse element. A material of each of the electric fuse element and the resistor element has silicon metal or nickel chromium. The electric fuse element and the resistor element are arranged in an upper layer of the first wiring and in lower layer of the second wiring. A wiring width of the second portion and a wiring width of the third portion are larger than a wiring width of the first portion.