Flipped Voltage Follower Regulator Biasing for Better Load Response
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Regulators based on flipped voltage follower (FVF) architecture face challenges with load response, load regulation, and power supply rejection (PSR).
Innovation Solution
A regulator design incorporating a bias voltage generating circuit and a flipped voltage follower (FVF) with specific transistor configurations and signal compensation mechanisms to enhance performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional FVF architecture is used, then the regulator has high sourcing ability and small output impedance, but the load response, load regulation and power supply rejection performance deteriorates
Solution Approach 1:
The regulator is divided into multiple functional modules: a flipped voltage follower module (MP1, MN1, MN2) for voltage regulation, a bias voltage generating module (MP2, MN3, MN4) for providing stable bias currents, and a compensation capacitor (C1) for stability. This segmentation allows each module to be optimized independently, resolving the contradiction between maintaining high sourcing ability and improving load response performance.
Solution Approach 2:
The patent implements a feedback mechanism where the output voltage is fed back through the FVF architecture to the gate of the P-type transistor MP1. This feedback loop, combined with the bias voltage generating circuit, dynamically adjusts the operating point to maintain stable voltage output while responding to load changes, thereby improving load response without sacrificing sourcing ability.
2Reliability
If the FVF architecture is used, then the output impedance is reduced, but the gain and stability performance worsens
Solution Approach 1:
The patent changes the operating parameters of the transistors by introducing a dedicated bias voltage generating circuit that provides optimized bias currents. The bias voltages Vbias1 and Vbias2 are specifically designed to set the transistors in their optimal operating regions, achieving both low output impedance and high gain simultaneously by adjusting the bias conditions rather than changing the fundamental FVF architecture.
Solution Approach 2:
The bias voltage generating circuit acts as an intermediary that mediates between the supply voltage and the FVF core circuit. It provides stabilized bias voltages that enable the FVF to achieve both low output impedance and high gain by controlling the operating points of the transistors, thus resolving the contradiction between these two performance parameters.
3Reliability
If the FVF architecture is used, then the small output impedance is achieved, but the power supply rejection ratio deteriorates
Solution Approach 1:
The feedback mechanism in the FVF architecture, combined with the bias voltage generating circuit, creates a regulated system that rejects power supply variations. The output voltage feedback through the FVF loop dynamically compensates for supply voltage changes, maintaining stable output voltage while preserving the low output impedance characteristic of the FVF architecture.
Solution Approach 2:
By separating the bias voltage generation function from the main FVF regulation function, the patent allows the bias circuit to provide stable reference voltages that are less sensitive to power supply variations. This segmentation enables the FVF core to maintain low output impedance while the overall system achieves improved power supply rejection through the stabilized biasing.
Data Source
AI summary
The present invention discloses a regulator. The regulator includes a bias voltage generating circuit and a flipped voltage follower (FVF), wherein the bias voltage generating circuit is configured to generate a bias voltage, and the FVF is configured to generate an output voltage according to the bias voltage and a supply voltage. The FVF includes a first P-type transistor and a first N-type transistor. The P-type transistor is configured to receive the bias voltage via a gate electrode of the P-type transistor, to generate the output voltage on a source electrode of the P-type transistor. A drain electrode of the first N-type transistor is connected to the supply voltage, a source electrode of the first N-type transistor is connected to the source electrode of the first P-type transistor, and a gate electrode of the first N-type transistor receives a driving signal for compensating the output voltage.
