GAA Channel Stack Layout for Mixed Power and Leakage Regions

The patent implements different numbers of stacked channel layers in different regions of the same chip. High-power regions utilize transistors with greater numbers of channel layers to achieve superior current driving capability, while low-leakage regions employ transistors with fewer channel layers to minimize leakage current. This local differentiation allows each region to be optimized for its specific functional requirements without requiring entirely separate manufacturing processes.

The chip is divided into distinct functional regions with different transistor configurations. The manufacturing process segments the channel layer formation into region-specific steps, where certain regions receive additional channel layers while others maintain fewer layers. This segmentation enables tailored device performance across the chip while maintaining a unified fabrication approach.

The manufacturing process is segmented into region-specific channel layer formation steps. The method involves forming initial channel layers across the entire chip, then selectively adding or removing channel layers in specific regions through controlled deposition and etching processes. This segmented approach enables varying channel layer counts in different regions while maintaining a systematic, scalable fabrication workflow that can be integrated into existing manufacturing lines.

The patent employs preliminary formation of a base set of channel layers across the entire chip before applying region-specific modifications. This preliminary action establishes a uniform foundation that simplifies subsequent processing, as only selective additions or removals are needed rather than complete region-by-region construction. This approach reduces manufacturing complexity by separating the common fabrication steps from the differentiated customization steps.