Gate-All-Around Dielectric Feature for Low-Capacitance Gate Separation
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Solution Overview
Problem
The integration of multi-gate devices in semiconductor manufacturing is challenging due to increased complexity and the need for advanced manufacturing processes and technologies to achieve smaller, faster, and more complex electronic devices.
Innovation Solution
The development of semiconductor structures with nanostructures, such as nanosheet transistors, and the use of gate-all-around transistor structures, where dielectric features with low k values are formed to reduce capacitance and improve performance, and the integration of self-aligned dielectric features to separate gate structures into portions, allowing for reduced device size and improved alignment during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate devices are integrated to improve gate control and reduce OFF-state current, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The gate structure is segmented into multiple gates (e.g., front gate and back gate) that can be independently formed and controlled. This segmentation allows for improved gate control and reduced OFF-state current through enhanced electrostatic control, while each gate can be manufactured using separate, well-established processes to manage overall manufacturing complexity
Solution Approach 2:
The multi-gate structure employs nested configurations where inner gates are surrounded by outer gates (e.g., gate-all-around structures where a second gate surrounds a first gate). This nesting provides superior gate control and reduced short-channel effects while maintaining compatibility with sequential manufacturing processes that form each gate layer by layer
2Productivity
If device dimensions are scaled down to improve production efficiency and lower costs, then productivity is improved, but manufacturing complexity increases
Solution Approach 1:
The patent transitions from planar 2D device structures to three-dimensional multi-gate structures (such as FinFETs, nanosheets, or gate-all-around configurations). This dimensional change enables continued scaling and improved productivity by increasing the effective channel width and gate control without requiring proportional increases in lithographic resolution, thereby managing manufacturing complexity at smaller dimensions
3Speed
If dielectric features with low k values are formed to reduce capacitance, then device speed is improved, but device complexity increases
Solution Approach 1:
Low-k dielectric materials are selectively placed in specific locations where capacitance reduction is most beneficial, such as between adjacent gates or in isolation regions. This local application of low-k materials reduces parasitic capacitance and improves device speed without requiring the entire device structure to be redesigned, thereby limiting the increase in overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the performance and reliability of semiconductor devices by reducing capacitance, improving speed, and increasing power efficiency, while also addressing the complexity of integrating multi-gate devices.
Implementation Method 1
dielectric features with low k values are formed to reduce capacitance and improve performance
Data Source
AI summary
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and first nanostructures and second nanostructures formed over the substrate. The semiconductor structure also includes a gate structure including a first portion wrapping around the first nanostructures and a second portion wrapping around the second nanostructures. The semiconductor structure also includes a dielectric feature sandwiched between the first portion and the second portion of the gate structure. In addition, the dielectric feature includes a bottom portion and a top portion over the bottom portion, and the top portion of the dielectric feature includes a shell layer and a core portion surrounded by the shell layer.