GAA Nanostructure Gate Layout for Short-Channel Control
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Solution Overview
Problem
The integration of gate-all-around (GAA) transistor structures in semiconductor manufacturing is challenging due to complexity in fabricating features around silicon nanowires, requiring improved methods to enhance gate control and reduce short-channel effects while maintaining scalability and cost-effectiveness.
Innovation Solution
A semiconductor structure is developed with nanostructure transistors featuring a top gate electrode layer with a shorter gate length and an inner gate electrode layer with a longer gate length, utilizing a method that includes forming nanostructures, dummy gate structures, and spacer layers to improve device density and performance by reducing gate leakage and off-state current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional GAA device fabrication methods are used, then gate control is improved, but manufacturing complexity increases
Solution Approach 1:
The gate structure is segmented into multiple layers (first gate layer, second gate layer, third gate layer) with different lengths, allowing each layer to be optimized independently for control and fabrication simplicity
Solution Approach 2:
The patent transitions from planar gate structures to three-dimensional gate-all-around structures that wrap around the channel in multiple dimensions, providing superior control while maintaining compatibility with standard CMOS processes
2Productivity
If gate length is reduced to increase component density, then integration efficiency improves, but gate control deteriorates
Solution Approach 1:
By extending the gate structure into the third dimension to wrap around the channel (gate-all-around configuration), the patent achieves enhanced gate control without requiring longer lateral gate lengths, thus maintaining high component density
Solution Approach 2:
The multi-layer gate structure nests shorter gate layers within the context of longer gate layers, with the first gate layer having the shortest length, the second gate layer having intermediate length, and the third gate layer having the longest length, creating a nested configuration that optimizes both density and control
3Reliability
If multi-gate devices are introduced to reduce short-channel effects, then device performance improves, but fabrication complexity increases
Solution Approach 1:
The gate-all-around structure serves multiple functions simultaneously: it provides enhanced gate control, reduces short-channel effects, and maintains compatibility with conventional CMOS fabrication processes, making it a universal solution for advanced device nodes
Solution Approach 2:
The patent employs preliminary patterning steps and sacrificial layer formation to pre-establish the complex three-dimensional gate structure before final device formation, simplifying subsequent fabrication steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the performance of semiconductor devices by improving gate control, reducing parasitic capacitance, and increasing on-state current, while maintaining the scalability and cost-effectiveness of GAA transistors.
Implementation Method 1
utilizing photolithography and self-aligned processes for patterning
Implementation Method 2
incorporating epitaxial stacks of alternating semiconductor layers to form nanowires or nanosheets as channels
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes a first set of nanostructures that are stacked vertically and spaced apart from one another and formed in a first well, a source/drain feature adjoining the first set of nanostructures, a first top gate electrode layer above a topmost nanostructure in the first set of nanostructures, and an inner gate electrode layer sandwiched between the nanostructures. A first dimension of the inner gate electrode layer in a first direction is greater than a second dimension of the first top gate electrode layer in the first direction.