GAA Nanowire Gate Structure for Lower Parasitic Capacitance
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high device density, performance, and cost-effectiveness due to fabrication and design issues in three-dimensional designs, particularly in nanometer technology process nodes.
Innovation Solution
The development of a gate all around (GAA) transistor structure with a stacked nanowire configuration, utilizing alternating semiconductor layers of different materials and a protective gate structure to enhance performance and reduce parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional designs are used to increase device density, then device density improves, but fabrication complexity increases
Solution Approach 1:
The semiconductor structure is divided into multiple alternating layers of first and second semiconductor materials arranged in a stacked configuration. This segmentation allows for increased device density through vertical stacking while maintaining manageable fabrication processes for each individual layer.
Solution Approach 2:
The patent transitions from planar two-dimensional device layouts to three-dimensional vertical stacking of semiconductor layers. This dimensional change enables higher device density by utilizing the vertical dimension, while the alternating layer structure provides a systematic approach to managing the increased fabrication complexity.
2Reliability
If gate-all-around structures are implemented, then electrical connectivity and performance improve, but manufacturing complexity increases
Solution Approach 1:
The gate structure is formed to completely surround each semiconductor nanowire, with the gate electrode wrapping around the nanowire in a nested configuration. This gate-all-around structure provides excellent electrical connectivity and control over the channel, while the systematic formation process using conformal deposition techniques manages the manufacturing complexity.
Solution Approach 2:
The patent employs conformal deposition processes to form gate dielectric and gate electrode layers with controlled thicknesses and uniform properties around the nanowire structures. By precisely controlling deposition parameters such as thickness, composition, and uniformity, the gate-all-around structure achieves superior electrical connectivity while maintaining manufacturability through parameter optimization.
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes a gate structure formed over nanostructures, and the gate structure comprises a gate dielectric layer and at least one metal layer over the gate dielectric layer. The semiconductor device structure includes a protection layer formed over the metal layer, and a gate spacer layer formed adjacent to the gate structure. The semiconductor device structure includes an insulating layer formed over the protection layer, and an interface is between the insulating layer and the gate spacer layer.