GAA Semiconductor Structure Inner Spacer Fabrication
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Solution Overview
Problem
Existing gate-all-around (GAA) device technology faces challenges in semiconductor manufacturing, particularly in forming channels under the gate and between source-drain regions, which can lead to defects and affect device performance due to the complexity of filling gate material in narrow trenches.
Innovation Solution
The proposed semiconductor structure and fabrication method involve forming first and second fin members with sacrificial layers and channel layers, creating openings and inner spacers to adjust channel length and facilitate gate material filling, thereby improving the reliability and performance of the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gate-all-around device structure is adopted to wrap channel all around by gate, then capacitance effect and short-channel effect are suppressed, but manufacturing complexity and defect probability increase due to narrow trenches requiring gate material filling
Solution Approach 1:
The patent applies preliminary action by forming inner spacers before the gate material filling process. The inner spacers are deposited in the trench structures before the gate electrode is formed, creating a framework that guides and facilitates the subsequent gate material filling. This preliminary structure simplifies the complex filling process and reduces defect probability while maintaining the gate-all-around wrapping capability.
Solution Approach 2:
The inner spacers serve as an intermediary element between the trench structure and the gate material. These spacers act as mediators that facilitate the gate material filling process, providing a template or scaffold that enables complete and uniform gate material deposition in the narrow trenches, thereby reducing manufacturing complexity and defects.
2Productivity
If transistor size is shrunk to less than a few nanometers, then device density and integration are improved, but manufacturing precision and process control become precarious
Solution Approach 1:
The patent segments the gate structure into multiple components: the gate electrode, the inner spacers, and the trench structures. This segmentation allows each component to be formed and controlled independently through dedicated process steps, improving overall manufacturing precision. The inner spacers are formed first as separate elements, followed by the gate material filling, enabling better process control at the nanometer scale.
Solution Approach 2:
The inner spacers act as intermediary structures that improve manufacturing precision by providing a reference framework for gate material filling. These spacers are formed with precise dimensions and positions, serving as templates that guide the subsequent gate material deposition, thereby enhancing process control accuracy at scaled-down dimensions.
3Productivity
If fin distance is reduced to shrink transistor size, then device integration is improved, but leakage current and short-channel effect increase
Solution Approach 1:
The patent applies preliminary action by forming the inner spacers and trench structures before final device completion. This preliminary structuring enables better control over the fin and channel regions, allowing for optimized fin distances that reduce leakage current while maintaining high device integration. The inner spacers create defined boundaries that prevent unwanted current paths.
Solution Approach 2:
The inner spacers serve as intermediary elements that mediate between the fin structures and the gate electrode. These spacers create well-defined interfaces and boundaries that control current flow paths, reducing leakage current while enabling reduced fin distances for higher device integration.
Data Source
AI summary
A semiconductor structure includes a base substrate including a first region and a second region. The semiconductor further includes a first fin member located over the first region, a second fin member located over the second region, a first dummy gate across a surface of the first fin member, and a second dummy gate across a surface of the second fin member. A first opening is formed in the first fin member located on each side of the first dummy gate, a second opening is formed between two adjacent first channel layers, a third opening is formed in the second fin member located at each side of the second dummy gate, and a fourth opening is formed between two second channel layers. The semiconductor structure still further includes a first inner spacer located in the second opening, and a second inner spacer located in the fourth opening.