GAA SRAM Cell Layout With Dielectric Dummy Gates
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Solution Overview
Problem
The design and manufacturing of SRAM chips with gate-all-around (GAA) transistors for multiple applications are complex and costly, as existing SRAM technologies have not been entirely satisfactory in all respects, particularly in terms of process complexity and cost.
Innovation Solution
A compact SRAM cell design with a four-poly-pitch layout and dielectric structures replacing gate structures of dummy transistors, allowing for better process margin and cost reduction by eliminating the need for costly lithography and etching processes, and integrating metal tracks on both sides of the substrate to reduce resistance and capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If gate-all-around (GAA) transistors are incorporated into SRAMs to reduce chip footprint, then functional density is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent segments the SRAM cell into distinct functional blocks (inverters, pass transistors, pull-up/pull-down transistors) with standardized layouts. Each block is independently designed and then replicated, reducing overall design complexity while maintaining high density through compact arrangement of these segmented functional units.
Solution Approach 2:
The patent implements nested structures where gate electrodes wrap around channel regions in a gate-all-around configuration, and where multiple functional elements are vertically stacked or horizontally nested within the same footprint area. This nesting achieves high functional density without proportionally increasing process complexity.
2Area of moving object
If gate-all-around (GAA) transistors are incorporated into SRAMs to reduce chip footprint, then functional density is improved, but manufacturing cost increases
Solution Approach 1:
The patent designs universal SRAM cell structures where the same basic building blocks (inverters, pass transistors, pull-up/pull-down transistors) can be replicated across multiple applications and technology nodes. This universality reduces per-unit manufacturing cost through standardization while maintaining the high-density GAA transistor architecture.
Solution Approach 2:
The patent adjusts geometric parameters of the SRAM cell components (channel width, gate length, spacing) to optimize the balance between density and manufacturability. By carefully controlling these parameters, the design achieves high functional density while remaining compatible with existing fabrication processes, thereby controlling manufacturing costs.
3Adaptability or versatility
If existing SRAM technologies are used for multiple applications, then versatility is maintained, but process complexity and cost increase
Solution Approach 1:
The patent creates a universal SRAM cell design that can be applied across multiple applications and technology nodes without requiring application-specific customization. The standardized inverter-based architecture with configurable parameters provides versatility for different uses while maintaining consistent, simplified manufacturing processes across all applications.
Data Source
AI summary
A memory device includes a first pull-down (PD) transistor, a second PD transistor, a first pass-gate (PG) transistor, and a second PG transistor arranged in a first direction and share a first active area, and a first pull-up (PU) transistor, a second PU transistor, a first dielectric structure, and a second dielectric structure arranged in the first direction and share a second active area. The first dielectric structure and a third gate structure of the first PG transistor extend in the second direction and are aligned with each other in the second direction. The second dielectric structure and a fourth gate structure of the second PG transistor extend in the second direction and are aligned with each other in the second direction.