GAA Transistor Doping via Solid Phase Diffusion
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Solution Overview
Problem
The semiconductor industry faces challenges in fabricating three-dimensional gate all-around (GAA) transistors, particularly in achieving precise dopant distribution and reducing the short channel effect, which affects device performance and density.
Innovation Solution
The method involves forming doped regions in nano-structure transistors using diffusion processes, including solid phase diffusion and plasma-assisted diffusion, to achieve precise dopant distribution within the channel regions, allowing for the formation of nano-sheet or nano-wire transistors with improved doping uniformity and reduced damage to the channel material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional doping methods are used in nanometer technology, then device density can be increased, but doping uniformity deteriorates and channel material damage increases
Solution Approach 1:
The patent changes the physical and chemical parameters of the doping process by using solid phase diffusion at controlled temperatures (400-1100°C) and employing plasma-assisted diffusion with specific gas compositions. These parameter changes enable precise dopant distribution while maintaining channel material integrity, resolving the contradiction between high device density and doping uniformity
Solution Approach 2:
The patent introduces intermediary substances including sacrificial layers containing dopants, plasma gases, and capping layers. These intermediaries facilitate controlled dopant delivery to the channel region, achieving uniform doping without direct contact methods that cause damage, thus improving both doping precision and device density
2Productivity
If conventional doping methods are used in nanometer technology, then device density can be increased, but channel material damage increases
Solution Approach 1:
The patent replaces mechanical implantation methods with thermal diffusion and plasma-assisted diffusion processes. This substitution eliminates the high-energy impact damage associated with conventional ion implantation, allowing high device density to be achieved without channel material damage
Solution Approach 2:
By changing the doping mechanism from mechanical implantation to thermal and plasma-assisted diffusion, the patent operates at lower energies that preserve channel material integrity while still achieving the dopant concentrations needed for high device density
3Ease of operation
If work function material layers are used to control threshold voltage, then threshold voltage control is achieved, but device complexity increases
Solution Approach 1:
The patent extracts the threshold voltage control function from separate work function material layers and integrates it directly into the gate electrode structure through doping. This eliminates the need for additional material layers, reducing device complexity while maintaining precise threshold voltage control
Solution Approach 2:
The gate electrode is given multiple functions: it provides both the electrical connection and the threshold voltage control through integrated doping. This multi-functionality eliminates the need for separate work function layers, simplifying the device structure while achieving the same control capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances doping uniformity, reduces damage to the channel semiconductor material, and allows for separate control of threshold voltage without the need for work function material layers, improving the performance and density of GAA transistors.
Implementation Method 1
a diffusion process is performed using a doped layer to form a doped region in the channel region
Implementation Method 2
a solid phase diffusion process is performed to diffuse a dopant from the doped layer into the channel region
Implementation Method 3
a plasma assisted diffusion process is performed to diffuse dopants into the channel regions
Data Source
AI summary
A method for forming a semiconductor arrangement includes forming a fin. A diffusion process is performed to diffuse a first dopant into the channel region of the fin. A first gate electrode is formed over the channel region of the fin after the first dopant is diffused into the channel region of the fin.