GAA Transistor Stacked Nanostructures for Nanometer Yield
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving efficient three-dimensional designs due to fabrication and design issues, particularly in nanometer technology process nodes, which affect device density, performance, and cost.
Innovation Solution
The development of a gate all around (GAA) transistor structure with a stacked nanostructure configuration, where first and second semiconductor layers are alternately stacked and patterned to form fin structures, allowing for the formation of a trench and subsequent gate structures with increased process window and yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If three-dimensional designs are implemented in nanometer technology process nodes, then device density and performance are improved, but fabrication complexity and design issues increase
Solution Approach 1:
The device is segmented into multiple stacked layers including alternating semiconductor layers (e.g., Si/SiGe) and dielectric layers, forming a three-dimensional stacked nanostructure. This segmentation enables higher device density by utilizing vertical space while maintaining manufacturability through modular layer construction.
Solution Approach 2:
The invention transitions from planar two-dimensional device layouts to three-dimensional stacked structures by adding the vertical dimension. Multiple active layers are stacked vertically with gate structures wrapping around each layer, achieving higher device density without increasing footprint area.
2Reliability
If gate structures are formed in trenches after removing dummy gate structures, then process window and yield are improved, but additional fabrication steps are required
Solution Approach 1:
A dummy gate structure is formed preliminarily over the stacked semiconductor layers during the epitaxial growth process. This dummy gate serves as a placeholder that guides subsequent processing steps, including trench formation and final gate structure deposition, improving process alignment and yield.
Solution Approach 2:
The dummy gate structure acts as an intermediary element that facilitates the formation of the final gate structure. It provides a reference framework for trench patterning and is removed after serving its guiding function, enabling more precise and reliable gate formation.
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes first nanostructures and second nanostructures formed over a substrate, and a first gate structure formed over the first nanostructures. The semiconductor device structure includes a second gate structure formed over the second nanostructures. The semiconductor device structure includes a first isolation layer between the first gate structure and the second gate structure. The first isolation layer has a first sidewall surface, a first portion and a second portion, the first sidewall surface of the first isolation layer is sloped, and a width of the first portion is greater than a width of the second portion.