Gallium Oxide Schottky Diode Using Group 4-9 Electrodes
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Solution Overview
Problem
Current semiconductor devices, particularly Schottky barrier diodes, face challenges in achieving optimal semiconductor characteristics such as high dielectric breakdown fields and efficient switching properties due to limitations in materials and fabrication methods for gallium oxide-based devices.
Innovation Solution
A semiconductor device is developed using a crystalline oxide semiconductor layer with a corundum structure, incorporating a Schottky electrode made from metals from the fourth to ninth groups of the periodic table, and a mist chemical vapor deposition method to form thin films with precise control over dopant concentration and layer thickness, enhancing electrical characteristics and switching performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metals from the tenth and eleventh groups (Au, Pt, Ni) are used for Schottky electrodes, then Schottky characteristics are achieved, but the dielectric breakdown field and switching performance are limited
Solution Approach 1:
The patent changes the fundamental parameter of electrode material selection by using metals from groups 4-9 (Ti, V, Cr, Mn, Fe, Co) instead of conventional group 10-11 metals. This parameter change enables achieving both high Schottky characteristics and high dielectric breakdown fields simultaneously, as demonstrated by the breakdown field reaching 6 MV/cm or more while maintaining excellent rectification properties.
Solution Approach 2:
The patent employs composite electrode structures combining multiple metal layers (e.g., Ti-Al-Ni-Au layered structure) to achieve optimal performance. The composite structure integrates the benefits of different metals: early transition metals (groups 4-6) provide high breakdown fields, while later metals (groups 8-11) ensure good Schottky characteristics and contact properties.
2Ease of manufacture
If conventional fabrication methods are used for gallium oxide devices, then manufacturing is simpler, but manufacturing precision of thin films and dopant concentration control are insufficient
Solution Approach 1:
The patent replaces conventional mechanical/physical deposition methods with chemical vapor deposition (CVD) technology. This substitution enables precise control over thin film thickness (at the nanometer scale) and dopant concentration (at the atomic percentage level), achieving manufacturing precision that cannot be obtained by traditional methods while maintaining fabrication feasibility.
Solution Approach 2:
The patent utilizes CVD process parameters (temperature, pressure, gas flow rates, precursor concentrations) to precisely control film properties. By optimizing these parameters, the patent achieves accurate control of layer thickness and dopant distribution, enabling high-performance semiconductor devices with reproducible characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in semiconductor devices with improved dielectric breakdown fields and switching characteristics, enabling the application of high electric currents while maintaining reliability and durability, suitable for power devices and other electronic components.
Implementation Method 1
a mist chemical vapor deposition method to form thin films with precise control over dopant concentration and layer thickness
Data Source
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AI summary
Semiconductor device including a semiconductor layer including a crystalline oxide semiconductor that comprises gallium; and a Schottky electrode that is positioned on the semiconductor layer. The semiconductor layer includes a surface area that is 3 mm2 or less.