Semiconductor Devices TRIZ Cases

Segmented metal layers and voids reduce contact resistance while increasing reflectivity for deep ultraviolet light extraction.

An asymmetric beveled reflector resolves total internal reflection losses in chip-scale packaging by redirecting trapped photons through angled surfaces.

An intermediary heat conduction substrate reduces phosphor temperature and mitigates thermal degradation in projection apparatuses.

A dielectric metal oxide cap with additional elements modulates the band gap to improve band alignment with a germanium channel.

Replacing broad red phosphors with narrow-spectrum orange emitters reduces Stokes shift losses, improving both luminous efficacy and color rendering index.

A conformal dielectric layer protects source and drain regions during contact formation to minimize series resistance in fin-type field effect transistors.

Segmented gate trenches insulated by LOCOS layers minimize Rdson by reducing the active area sacrificed for drain formation in MOSFETs.

Segmenting the n-type hole charge blocking region resolves the trade-off between forward conduction voltage drop and breakdown voltage.

A light-emitting device uses a second light-transmissive member containing hollow particles to scatter extraneous light and uniformize the object color of the surface.

A semiconductor epitaxial substrate uses a barrier layer with an indium composition gradient to enhance ohmic contact characteristics.

Aluminum scandium nitride barrier layers in gallium nitride high electron mobility transistors generate high sheet charge density.

Deep shielding connection patterns electrically link shield regions to source contacts in gate trench power devices.

A rectangular trench IGBT uses a protruding body contact region to discharge hole carriers efficiently.

A GeSi avalanche photodiode uses a resonance cavity reflector to enhance light absorption efficiency.

Spacing organic phosphors from the chip via an intermediary structure reduces blue light intensity, preventing rapid aging of the red-emitting material.

A color wheel display device uses an electro-wetting lens to adjust light angles and form stereoscopic images.

Outer peripheral trench disperses electric field concentration at anode corners, preventing dielectric breakdown while maintaining low leakage current.

A porous gallium phosphide layer scatters internal light to boost extraction efficiency without adding forward voltage drop.

Segmented semiconductor zones with specific doping profiles reduce edge electric field strengths, preventing flashovers while maintaining production efficiency.

Vertical fins connecting horizontal channel sheets distribute current flow to reduce crowding and leakage while balancing NMOSFET and PMOSFET reliability.

Vertical trench gates bypass narrow lateral paths to lower parasitic JFET resistance while multilayer ohmic contacts eliminate high-temperature heat treatments.

Conventional finFETs fail to operate at both high speeds and high voltages. This design extends the current path to resolve that contradiction.

Crystalline gallium oxide semiconductor layer with a Schottky electrode made from periodic table groups four to nine.

Graded insertion layers relieve lattice strain between mismatched semiconductor layers, boosting efficiency and reliability.

A recessed conductive strap connects source and drain regions in a MUGFET structure to minimize gate-to-source capacitance.

Segmented body contacts lower resistance and eliminate sneak paths in high voltage field effect transistors.

A thin film transistor substrate uses a reduced photoresist pattern to protect the channel during etching without an additional stop layer.

Perpendicular venting channels release thermal expansion pressure while blocking debris ingress during manufacturing.

A semiconductor field plate uses a refractory metal interposer layer between current carrying layers to reduce electromigration.

Spatially varying doping profiles in Group III nitride LED barrier-well units mitigate current droop and thermal degradation at elevated operating temperatures.

Separate optical filter layers transfer onto a semiconductor substrate, reducing material waste and manufacturing cycle time compared to sequential deposition.

Thick gate dielectric in the drift region reduces peak electric fields and hot carrier injection, improving HVMOS reliability.

A phosphor film coats an array of LED dies on a carrier substrate before dicing to enable batch processing.

Segmented drift regions and precise gate electrode placement reduce on-resistance while maintaining breakdown voltage in compact power transistors.

An AlGaN barrier layer in the ridge-shaped gate structure suppresses threshold voltage fluctuations and stabilizes normally-off operation.

Raised circuit board wiring fills gaps with white resin to protect exposed electrodes from corrosion while improving light extraction efficiency.

Vacancies with side walls selectively scatter trapped rays while minimizing absorption, resolving the trade-off between extraction efficiency and output power.

Asymmetric gate positioning reduces parasitic capacitance to lower time delays, enabling semiconductor devices to operate at frequencies exceeding 350 GHz.

A packaged LED structure uses a sloped resin base inner wall to expose the emitting chip top surface and enhance illumination.

Segmented InGaN quantum wells with AlGaN cladding distribute charge carriers to maintain high efficiency at low current densities despite structural complexity.

An integrated nitride semiconductor device merges the freewheel diode with the FET structure to reduce forward voltage and ON resistance.

Inorganic encapsulation surrounds wavelength-converting quantum dot cores to enable high-density packing without polymer matrix material.

Narrower bulk pick-up regions in an LDMOS structure boost ESD robustness to 7.5 kV HBM while reducing chip area usage.

A magnetic pull device aligns light-emitting diodes onto a backplane cavity.

Graded p-type doping profiles reduce dark currents while tensile strain engineering extends spectral response to 1650 nm for high-speed optical communication.

A semiconductor device structure with a specific gate insulating film thickness ratio disperses electric field concentration through polarization charges.

Segmented transparent electrode and dielectric layers resolve high contact resistance and low light extraction in p-type AlGaN UV LEDs.