IGBT Power Device With Segmented Hole Charge Blocking Region
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Solution Overview
Problem
The doping concentration of the n-type hole charge blocking region in IGBT power devices affects both the forward conduction voltage drop and turn-off time, limiting the optimization of these parameters due to its impact on breakdown voltage.
Innovation Solution
The IGBT power device design includes a unique groove structure with a gradually decreasing n-type hole charge blocking region height between adjacent second grooves, separated by a p-type body region and n-type drift region, and a shield gate configuration that adjusts capacitance, allowing for reduced forward conduction voltage drop and turn-off time without affecting reverse breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the doping concentration of the n-type hole charge blocking region is increased, then the forward conduction voltage drop is reduced and turn-off time is shortened, but the breakdown voltage is reduced
Solution Approach 1:
The patent applies local quality by creating different doping concentration zones within the n-type hole charge blocking region. The region has a first doping concentration in the lower portion and a second doping concentration in the upper portion, allowing different areas to serve different functions: the lower portion with higher doping reduces forward conduction voltage drop, while the upper portion with lower doping maintains breakdown voltage
Solution Approach 2:
The n-type hole charge blocking region is segmented into multiple zones with different doping concentrations. This segmentation allows the region to simultaneously achieve low forward conduction voltage drop (through the higher doped lower portion) and high breakdown voltage (through the lower doped upper portion), resolving the technical contradiction
2Loss of time
If the doping concentration of the n-type hole charge blocking region is increased, then the turn-off time is shortened, but the breakdown voltage is reduced
Solution Approach 1:
The patent applies local quality by creating different doping concentration zones within the n-type hole charge blocking region. The region has a first doping concentration in the lower portion and a second doping concentration in the upper portion, allowing different areas to serve different functions: the lower portion with higher doping reduces turn-off time, while the upper portion with lower doping maintains breakdown voltage
Solution Approach 2:
The n-type hole charge blocking region is segmented into multiple zones with different doping concentrations. This segmentation allows the region to simultaneously achieve short turn-off time (through the higher doped lower portion) and high breakdown voltage (through the lower doped upper portion), resolving the technical contradiction
Data Source
AI summary
Provided is an IGBT power device. The device includes: a p-type collector region; an n-type drift region located above the p-type collector region; multiple first grooves, where a second groove is provided below each of the multiple first grooves; a gate structure located in the first groove and the second groove; a p-type body region located between two adjacent first grooves; an n-type emitter region located in the p-type body region; and an n-type hole charge blocking region located between two adjacent second grooves.