Galvanic Isolation via Voltage-Controlled Conductance
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Solution Overview
Problem
Existing galvanic isolation methods, such as capacitive, inductive, magnetic, optical, and radio frequency coupling, face limitations in bandwidth and voltage range, and often require large circuit areas, making them inefficient for high-voltage applications.
Innovation Solution
A galvanic isolation device using a semiconductor layer with an insulation layer and high voltage terminal, where the voltage applied to the high voltage terminal influences the conductance of the semiconductor layer, allowing for improved bandwidth and voltage range while maintaining galvanic isolation between terminals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional galvanic isolation methods (capacitive, inductive, magnetic, optical, RF coupling) are used, then galvanic isolation is achieved, but bandwidth and voltage range are limited and circuit area becomes large
Solution Approach 1:
The patent changes the fundamental operating parameters of the isolation device by using a semiconductor layer whose conductance can be dynamically modulated by a control voltage. This allows the device to operate across a wide bandwidth including DC signals and handle high voltages (exceeding 100V) while maintaining a compact form factor, resolving the contradiction between versatility and circuit area
Solution Approach 2:
The patent replaces conventional isolation mechanisms (capacitive coupling, inductive coupling, magnetic coupling, optical coupling, RF coupling) with a semiconductor-based conductance modulation mechanism. This substitution enables superior performance in bandwidth, voltage range, and area efficiency by utilizing the electric field control properties of semiconductor materials
2Reliability
If conventional galvanic isolation methods are used, then galvanic isolation is achieved, but the systems require large circuit areas making them inefficient
Solution Approach 1:
By changing to a semiconductor-based mechanism with voltage-controlled conductance, the patent achieves reliable galvanic isolation in a compact structure, dramatically improving area efficiency while maintaining isolation effectiveness
Solution Approach 2:
The patent transitions from planar coupling structures (capacitive, inductive, optical) to a vertical field-effect structure where the control voltage is applied perpendicular to the current flow path through the semiconductor layer. This dimensional change enables compact integration while maintaining reliable isolation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides enhanced galvanic isolation with improved bandwidth, including DC signals, and a compact design, enabling efficient information transfer across isolating barriers with improved voltage handling capabilities.
Implementation Method 1
a voltage applied to the high voltage terminal influences the conductance of the semiconductor layer
Data Source
AI summary
Various exemplary embodiments relate to an isolation device including a semiconductor layer and an insulation layer. The insulation layer insulates a central portion of the semiconductor layer. A high voltage terminal connects to the insulation layer, a first low voltage terminal connects to a first non-insulated portion of the semiconductor layer, and a second low voltage terminal connects to a second non-insulated portion of the semiconductor layer. The first and second low voltage terminals are electrically connected via the semiconductor layer. A voltage applied to the high voltage terminal influences the conductance of the semiconductor layer. The high voltage terminal is galvanically isolated from the first and second low voltage terminals.