GaN/AlGaN Wire LED Structure for Integrated Current Leak Isolation
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Solution Overview
Problem
Optoelectronic devices with three-dimensional light-emitting diodes face challenges such as current leaks due to defects at the interface with the substrate and side surfaces, leading to performance deterioration and increased manufacturing costs from additional steps required for electrical isolation and passivation.
Innovation Solution
The optoelectronic device features wire-like light-emitting diodes with a first doped area in gallium nitride and a second doped area in gallium and aluminum nitride, where the second area has a varying aluminum concentration to create an electrically insulating portion, reducing current leaks and eliminating the need for external electrical isolation, thereby simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional steps are taken to electrically isolate interfaces and passivate side surfaces, then current leaks are reduced, but manufacturing complexity and costs increase
Solution Approach 1:
The patent merges the functions of electrical isolation and passivation into the light-emitting diode structure itself by integrating an insulating layer formed from the same semiconductor material during the growth process. This eliminates the need for separate external isolation steps while maintaining current leak prevention and surface passivation functions.
Solution Approach 2:
The light-emitting diode structure provides its own electrical isolation and passivation through the integrated insulating layer, making the system self-sufficient. The insulating layer is formed as part of the semiconductor growth process, allowing the device to isolate itself from the substrate and passivate its own surfaces without external intervention.
2Reliability
If additional passivation steps are performed after light-emitting diode growth, then side surface oxidation and current leaks are prevented, but manufacturing time and costs increase
Solution Approach 1:
The insulating layer is formed during the light-emitting diode growth process itself, performing the passivation action preliminarily before the device is complete. This preliminary formation of the insulating layer prevents oxidation and current leaks at side surfaces during subsequent manufacturing steps, eliminating the need for post-growth passivation treatments.
Solution Approach 2:
The patent combines the passivation function with the semiconductor layer formation process. The insulating layer is grown simultaneously with or as part of the light-emitting diode structure, merging two previously separate operations (device growth and surface passivation) into a single integrated process step.
3Reliability
If external electrical isolation steps are implemented, then interface current leaks are reduced, but manufacturing costs increase
Solution Approach 1:
The light-emitting diode structure provides its own electrical isolation at the interface with the substrate through the integrated insulating layer. This self-isolation capability eliminates the need for external isolation layers or additional isolation steps, reducing manufacturing complexity and costs while maintaining effective electrical isolation at critical interfaces.
Solution Approach 2:
The patent extracts the electrical isolation function from external separate layers or steps and integrates it directly into the light-emitting diode structure. By forming the insulating layer as part of the semiconductor growth process, the isolation function is embedded within the device itself rather than being added externally, simplifying the overall manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces current leaks at the interface and side surfaces, minimizing defects and manufacturing costs by integrating passivation and electrical insulation within the device structure.
Implementation Method 1
all or part of the second part having a second average atomic concentration of aluminum different from the first average atomic concentration and adapted so that the second part is electrically insulating
Implementation Method 2
an optoelectronic device with light-emitting diodes makes it possible to perform the conversion of an electrical signal into an electromagnetic radiation
Implementation Method 3
The P-N junction comprises a semiconductor portion doped according to a first type of N-type doping and a semiconductor portion doped according to a second type of P-type doping
Data Source
AI summary
An optoelectronic device includes a substrate and wire-shaped light-emitting diodes the wire shape of which is elongate along a longitudinal axis. Each light-emitting diode has a doped first region including, over all or some of its height measured along the longitudinal axis, of a central first segment that is substantially elongate along the longitudinal axis, this segment being based on gallium nitride, and of an external second segment, this segment being based on aluminium and gallium nitride. The second segment includes an external first portion arranged laterally around the first segment (121), all or some of the first portion having a first average atomic concentration of aluminium, and of a lower second portion arranged at least between the first portion of the second segment and the substrate, the second portion having a second average atomic concentration of aluminium being electrically insulating.