GaN Bi-Directional HEMT Switches With Common Drift Region
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Solution Overview
Problem
The complexity of designing bi-directional switches using back-to-back series connected power semiconductor devices has hindered the adoption of cycloconverter-based switched mode converter designs, which are needed for efficient renewable energy systems like photovoltaic systems.
Innovation Solution
The use of native four quadrant bi-directional switches with a common drift region, such as gallium nitride (GaN) high electron mobility transistor (HEMT) switches, allows current flow in both directions, reducing complexity and cost compared to conventional uni-directional transistor pairs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If back-to-back series connected uni-directional transistors are used to form bi-directional switches, then current flow in both directions is achieved, but device complexity and design difficulty increase significantly
Solution Approach 1:
The patent merges two uni-directional transistors into a single integrated bi-directional transistor structure with a common drift region. The source regions are positioned on opposite sides of the drift region, and both gates control the same drift region, effectively combining the functionality of two separate devices into one unified structure that reduces overall complexity.
Solution Approach 2:
The common drift region serves multiple functions: it acts as the active region for both uni-directional transistors simultaneously, allowing the single device to perform bi-directional current flow control. This multi-functional design eliminates the need for separate drift regions in each transistor, reducing device complexity while maintaining full bi-directional capability.
2Adaptability or versatility
If back-to-back series connected power semiconductor devices are used, then bi-directional switching is achieved, but manufacturing complexity increases
Solution Approach 1:
The manufacturing process merges the fabrication of two transistors into a single integrated structure. The common drift region is formed once and serves both transistors, reducing the number of fabrication steps, material depositions, and processing operations required compared to manufacturing two separate transistors and connecting them in series.
3Area of moving object
If native four quadrant bi-directional switches with common drift region are used, then die area is reduced by half, but device structure complexity increases
Solution Approach 1:
The patent merges two transistor structures into one by sharing the drift region. This consolidation eliminates the need for separate drift regions, source regions, and gate structures for each transistor, thereby reducing the total die area occupied by the bi-directional switch while integrating the functionality of both transistors into a compact unified structure.
Data Source
AI summary
A switched mode power converter is provided herein and comprises a cycloconverter comprising a plurality of switches, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch with a common drift region configured to allow current flow in a first direction from a first source terminal to second source terminal and in a second direction from the second source terminal to the first direction.