GaN Power Semiconductor Structure for Current Collapse Suppression
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Solution Overview
Problem
Current collapse effects in GaN-based field effect transistors due to electron trapping between the gate and drain electrodes, leading to increased resistance and memory effects in the channel conduction.
Innovation Solution
Formation of multiple hole injection regions spaced apart at the bottom of the drain electrode to capture trapped electrons, increasing the current path area by forming protruding regions and reducing electric fields with field plates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional power semiconductor device structure is used, then the device can be manufactured with standard processes, but current collapse effects occur due to electron trapping between gate and drain electrodes
Solution Approach 1:
The drain electrode is divided into multiple segments with hole injection regions spaced apart from each other. This segmentation allows electrons trapped between the gate and drain to be captured by multiple distributed hole injection regions, preventing current collapse while maintaining a manageable structure that can be integrated into standard manufacturing processes.
Solution Approach 2:
Hole injection regions are introduced as intermediary structures between the gate electrode and drain electrode. These regions serve as mediators that inject holes to capture trapped electrons, thereby preventing current collapse effects without requiring fundamental changes to the overall device architecture.
2Area of moving object
If the current path area is increased by forming protruding regions, then the current conduction capability is improved, but the manufacturing process complexity increases
Solution Approach 1:
The protruding regions are formed as multiple discrete segments rather than a single continuous structure. This segmentation increases the total current path area while allowing each individual protruding region to be formed using standard photolithography and etching processes, thereby maintaining ease of manufacture.
Solution Approach 2:
Protruding regions are formed by extending structures vertically downward from the drain electrode in the depth dimension. This dimensional approach increases the current path area without requiring lateral expansion that would complicate the manufacturing process, as the protrusions can be formed through controlled etching of existing layers.
3Reliability
If field plates are formed to reduce electric fields, then the device reliability is improved, but the device structure becomes more complex
Solution Approach 1:
The field plates are designed to serve multiple functions: they reduce electric fields between the gate and drain to prevent breakdown, and they can also be integrated with existing device structures such as the drain electrode or insulating layers. This multi-functionality reduces reliability issues without proportionally increasing device complexity.
Solution Approach 2:
The field plate structure can be implemented as a simplified copy or extension of existing device components. Rather than introducing a completely new complex structure, the field plate replicates the essential function of electric field management using a streamlined design that complements the existing device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents current collapse by capturing trapped electrons, enhances current path area, ensures process uniformity, and reduces electric fields, thereby improving device reliability and performance.
Implementation Method 1
capture electrons trapped between a gate electrode and a drain electrode to prevent current collapse effects by forming a plurality of hole injection regions
Data Source
AI summary
Proposed are a power semiconductor device and a method of manufacturing the same seeking to increase a current path area and to capture electrons trapped between a gate electrode and a drain electrode to prevent current collapse effects by forming a plurality of hole injection regions spaced apart from each other at the bottom of the drain electrode.