GaN Transistor Dynamic Resistance Testing for Current Collapse
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Solution Overview
Problem
GaN-based transistors experience current collapse due to electron traps, affecting power circuits like converters and inverters, especially at high temperatures and low voltages, necessitating an improved method for accurately measuring drain-source dynamic resistance.
Innovation Solution
A test circuit with switch elements and a control stage that alternates configurations to measure drain-source voltage, using an inductive load and current sensor, and includes a soaking phase to stabilize the transistor before measurement, with an operational amplifier for precise resistance evaluation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional measurement methods are used for GaN transistor drain-source dynamic resistance, then measurement can be performed, but measurement precision is insufficient and thermal stress affects reliability
Solution Approach 1:
The patent applies preliminary action by implementing a soaking phase before measurement where the transistor is biased in the on-state for a predetermined time period. This preliminary biasing stabilizes the transistor's electrical characteristics and reduces thermal stress effects, ensuring more reliable and accurate resistance measurements. The control circuit prepares the transistor in advance by establishing proper bias conditions before the actual measurement occurs.
Solution Approach 2:
The patent employs periodic action through alternating measurement phases where the transistor is periodically switched between on-state and off-state. The control circuit implements repeated cycles of biasing, measuring, and resetting, allowing the transistor to return to initial conditions between measurements. This periodic operation enables multiple measurements to be taken under consistent thermal and electrical conditions, improving measurement precision while accounting for thermal effects.
2Adaptability or versatility
If simple test circuits are used, then device complexity is reduced, but adaptability to serial testing and measurement precision are compromised
Solution Approach 1:
The patent achieves universality by designing a test circuit that can perform multiple functions: it can measure drain-source dynamic resistance, conduct soaking phases, execute measurement phases, and prepare transistors for serial testing. The control circuit is configured to handle different measurement sequences and can adapt to test multiple transistors in succession. This multi-functional design enables the same circuit to serve various measurement needs without requiring separate specialized circuits for each function.
Solution Approach 2:
The patent applies dynamics by implementing a control circuit that can dynamically switch between different operational modes and configurations. The circuit transitions between soaking phases, measurement phases, and resetting phases based on control signals. Switching elements within the test circuit can be dynamically reconfigured to adapt to different measurement requirements and serial testing sequences, providing flexibility without permanent complexity.
Data Source
AI summary
A device for evaluating a dynamic resistance in a conducting state of a GaN-based transistor. The device including a test circuit provided with a circuit, the GaN-based transistor, forming an arm of the circuit, the device being provided with a stage for controlling the switch elements of the circuit to alternately set the switch elements of the circuit in a first configuration and then in a second configuration, the control stage being configured to trigger a connection of a drain-source voltage measuring stage to the GaN-based transistor after the circuit is set in the first configuration, and to trigger a disconnection of the drain-source voltage measuring stage from the GaN-based transistor before the circuit is set in the second configuration.