GaN-on-Glass Semiconductor Structure for Low-Temperature Sputtering
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Solution Overview
Problem
The high manufacturing costs of micro LED display devices are attributed to the difficulty in forming gallium nitride transistors on large-area substrates at high temperatures, making it challenging to reduce production costs.
Innovation Solution
A semiconductor device configuration utilizing an amorphous glass substrate with an oriented insulating layer and sputtering method to grow crystalline gallium nitride layers, allowing for the formation of both p-type and n-type gallium nitride layers with controlled crystallinity, which reduces manufacturing costs and improves device efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gallium nitride layers are deposited on sapphire substrates at high temperatures (800-1000°C) using MOCVD or HVPE, then high crystallinity and electrical properties are achieved, but manufacturing cost increases and large-area substrate processing becomes difficult
Solution Approach 1:
The invention changes the temperature parameter from high temperature (800-1000°C) to low temperature (room temperature or slightly elevated), and changes the deposition method from MOCVD/HVPE to sputtering, thereby achieving crystalline gallium nitride layers with good electrical properties at lower cost and enabling large-area substrate processing
Solution Approach 2:
The invention introduces an oriented insulating layer as an intermediary between the substrate and the gallium nitride layer. This intermediary layer provides the necessary crystal orientation and quality for growing crystalline gallium nitride at low temperatures, mediating between the substrate and the semiconductor layer to achieve high quality without high temperature processing
2Reliability
If gallium nitride transistors are formed on large-area substrates at high temperatures, then high device performance is achieved, but manufacturing complexity and cost increase
Solution Approach 1:
The invention changes the temperature parameter from high to low, simplifying the manufacturing process and enabling large-area substrate processing while maintaining good device performance through the use of sputtering deposition and oriented insulating layers
Solution Approach 2:
The oriented insulating layer serves multiple functions: it provides crystal orientation for the gallium nitride layer, acts as a buffer layer, and enables low-temperature processing. This multi-functionality reduces the need for additional specialized layers and processes, thereby reducing manufacturing complexity
3Manufacturing precision
If conventional methods are used to form gallium nitride layers, then high crystallinity is achieved, but production cost increases
Solution Approach 1:
The invention changes the deposition method from MOCVD/HVPE to sputtering, and changes the temperature from high to low, thereby reducing production cost while maintaining good crystallinity through the oriented insulating layer
Solution Approach 2:
The invention uses a sputtering target (consumable material) to deposit gallium nitride layers at low cost. The sputtering process is more cost-effective for large-area processing compared to MOCVD or HVPE, enabling economical production while achieving the desired crystalline quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the cost-effective production of semiconductor devices with improved crystallinity and electrical properties, facilitating the integration of gallium nitride transistors and light-emitting diodes on large-area substrates, thereby reducing manufacturing costs and enhancing device performance.
Implementation Method 1
A semiconductor device configuration utilizing an amorphous glass substrate with an oriented insulating layer and sputtering method to grow crystalline gallium nitride layers
Implementation Method 2
an oriented insulating layer arranged on the amorphous glass substrate and having a crystal orientation, a first gallium nitride layer arranged on the oriented insulating layer and in contact with the oriented insulating layer
Data Source
AI summary
A semiconductor device using a gallium nitride layer has an amorphous glass substrate, an oriented insulating layer arranged on the amorphous glass substrate and having a crystal orientation, a first gallium nitride layer arranged on the oriented insulating layer and in contact with the oriented insulating layer, the first gallium nitride layer being a first conductivity type, a gate electrode opposed to the first gallium nitride layer, and a gate insulating layer between the first gallium nitride layer and the gate electrode. The oriented insulating layer may have a plane with 6-fold rotational symmetry.