GaN HEMT Substrate Vacancies to Reduce High-Frequency Coupling
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Solution Overview
Problem
High-frequency coupling effects in high electron mobility transistors (HEMTs) lead to reduced device performance, particularly in GaN HEMTs used in mobile phones, satellite TVs, and radars.
Innovation Solution
A semiconductor structure with insulating vacancies and through holes in the substrate, where a conductive layer is formed to electrically connect the semiconductor device, reducing high-frequency coupling by grounding the source through the conductive layer and positioning insulating vacancies below the channel layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional substrate structure is used in GaN HEMT, then device performance is maintained, but high-frequency coupling effects reduce performance
Solution Approach 1:
The patent extracts the harmful coupling effect by removing substrate material to create insulating vacancies beneath the channel layer. These vacancies eliminate the parasitic capacitance between the channel and substrate, directly addressing the high-frequency coupling problem while maintaining device performance.
Solution Approach 2:
The patent introduces insulating vacancies (porous structure) in the substrate beneath the channel layer. These vacancies act as insulating regions that block the coupling path between the channel and substrate, reducing high-frequency coupling effects without affecting other device functions.
2Object-affected harmful factors
If insulating vacancies and through holes are formed separately, then high-frequency coupling is reduced, but process complexity and cost increase
Solution Approach 1:
The patent merges the formation of insulating vacancies and through holes into a single etching process step. By using a unified process to create both features, the patent reduces process complexity and manufacturing cost while achieving the same electrical isolation effect that would otherwise require separate processing steps.
Data Source
AI summary
A semiconductor structure including a substrate, a conductive layer, and a semiconductor device is provided. The substrate includes a first surface, a second surface opposite to the first surface, at least one insulating vacancy extending from the first surface toward the second surface, and a through hole passing through the substrate. The conductive layer fills in the through hole. The semiconductor device is disposed on the second surface and is electrically connected to the conductive layer, and the at least one insulating vacancy is distributed corresponding to the semiconductor device.